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Photosensitivity of bulk and monolayer MoS2-based two-terminal devices

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Abstract

Transition metal dichalcogenides (TMDCs), such as MoS2, MoSe2, WS2, and WSe2, have attracted enormous attention owing to their unique electrical and optical properties. A type of material known as TMDC has the MX2 formula with a direct bandgap in ultra-thin layers and indirect bandgap properties in the bulk. TMDCs have attracted significant research interest due to their use in nano-devices, opto-electronics, and next-generation electronics. In the study, two different MoS2 devices, Au–bulk MoS2–Au and Au–monolayer MoS2–Au, were fabricated, and their photon-induced current–voltage characteristics at different wavelengths (red ≈ 650 nm, green ≈ 532 nm and blue ≈ 450 nm) and values were compared. Additionally, the time-dependent photoresponses of these devices under red light irradiation (wavelength, \({\lambda }_{ex}\) = 650 nm) were analyzed. The Au–monolayer MoS2–Au device had a higher current response compared with the Au–bulk MoS2–Au device. These results suggest that single-layer MoS2 devices could be more efficient and responsive than bulk MoS2 devices for a variety of applications.

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Acknowledgements

This work is supported by the Dongguk University Research Fund of 2020, and by the National Research Foundation (NRF) of Korea (grant no. 2021R1F1A1062672)

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  1. Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, South Korea

    Sangeun Cho, Wooyoung Park, Hyunsik Im & Hyungsang Kim

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  1. Sangeun Cho
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Correspondence to Hyungsang Kim.

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Cho, S., Park, W., Im, H. et al. Photosensitivity of bulk and monolayer MoS2-based two-terminal devices. J. Korean Phys. Soc. 83, 344–349 (2023). https://doi.org/10.1007/s40042-023-00884-w

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