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Resistive random access memory based on graphene oxide with UV-O3 treatment

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Abstract

We fabricated Graphene Oxide (GO) sandwiched by Multi-layer Graphene (MLG) for operating as an RRAM device. By investigating the UV-O3 treatment time dependency of the MLG/GO/MLG device, we confirmed the critical UV-O3 treatment time under sufficiently oxidized conditions for stable Resistive Random Access Memory (RRAM) operation during a repeating DC voltage sweep. The bipolar resistive switching mechanism of the MLG/GO/MLG structure was verified through the algebraic algorithmic relation between the current and voltage. This result provides important clues for developing fully 2D material-based electric devices.

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Acknowledgements

This research was supported by the BK21 FOUR Program by Chungnam National University Research Grant, 2022, and a Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2020R1A6A1A03047771)

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Author notes

  1. BeomKyu Shin and Jong Yun Kim are co-first authors who contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Chungnam National University, Daejeon, 34134, Republic of Korea

    BeomKyu Shin, Oh Hun Gwon & Young-Jun Yu

  2. Institute of Quantum Systems, Chungnam National University, Daejeon, 34134, Republic of Korea

    Jong Yun Kim, Seok-Ju Kang, Hye Ryung Byun, Seo Gyun Jang & Young-Jun Yu

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  1. BeomKyu Shin
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  2. Jong Yun Kim
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  3. Oh Hun Gwon
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Correspondence to Young-Jun Yu.

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Shin, B., Kim, J.Y., Gwon, O.H. et al. Resistive random access memory based on graphene oxide with UV-O3 treatment. J. Korean Phys. Soc. 83, 38–42 (2023). https://doi.org/10.1007/s40042-023-00832-8

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  • DOI: https://doi.org/10.1007/s40042-023-00832-8

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