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Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se2 solar cell during the deposition of ZnO:Al window layer

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Abstract

The effect of the substrate temperature during the deposition of a ZnO:Al (AZO) window layer on the performance of Cu(In, Ga)Se2 (CIGS) solar cells was studied. Although the structural, electrical and optical properties of separate AZO films are enhanced with higher substrate temperature, the overall performance of final CIGS solar cells is deteriorated. At higher substrate temperature, the diffusion of Cd, Zn and Al into the CIGS absorber layer was observed with secondary ion-mass spectroscopy measurements. This diffusion could form a buried p–n junction, resulting in deteriorated device characteristics.

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Acknowledgements

This study was supported by the National Research Foundation of Korea [2020R1A2C2014644, 2017R1A5A1014862 (SRC program: vdWMRC center)] and LG Display company.

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Authors and Affiliations

  1. Department of Physics, Yonsei University, Seoul, 03722, Korea

    Kiwoong Kim & Yeonjin Yi

  2. Department of Physics, Yonsei University, Wonju, 26493, Korea

    Daeyeop Han & Jinchul Choi

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  1. Kiwoong Kim
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  2. Yeonjin Yi
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Correspondence to Yeonjin Yi.

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Kim, K., Yi, Y., Han, D. et al. Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se2 solar cell during the deposition of ZnO:Al window layer. J. Korean Phys. Soc. 79, 851–856 (2021). https://doi.org/10.1007/s40042-021-00318-5

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  • DOI: https://doi.org/10.1007/s40042-021-00318-5

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