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Design and growth of InAsP metamorphic buffers for InGaAs thermophotovoltaic cells

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Abstract

The structural and optical properties of InAsxP1-x metamorphic buffers grown by metal–organic chemical vapor deposition on InP (100) substrates have been investigated. High-resolution X-ray reciprocal space mapping around the (115) InP lattice point reveals that the strain relaxations of the InAsxP1-x with x = 0.5, 0.55, and 0.7 are 98%, 92%, and 96%, while the lateral correlation lengths are 17, 62, and 28 nm, respectively. The optical bandgap energy of the InAsP derived from photoreflectance (PR) measurements decreases from 0.819 to 0.621 eV at 300 K when increasing As composition from x = 0.5 to 0.7. The bowing parameter for the optical bandgap of the InAsP is increased with increasing As composition, which is attributable to the increased spontaneous CuPt-type ordering in InAsP. It is found from the excitation power-dependent PR measurement that the InAsxP1-x layers have different degrees of the bandgap redshift due to the reduced thermal conductivity caused by crystal imperfections generated during the strain relaxation process.

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Acknowledgements

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030013380), the Nano Material Fundamental Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2018M3A7B4069994), and the characterization platform for advanced materials funded by Korea Research Institute of Standards and Science (KRISS–2021–GP2021-0011).

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  1. Thuy Thi Nguyen and Yeongho Kim authors contributed equally to this work.

Authors and Affiliations

  1. Division of Industrial Metrology, Korean Research Institute of Standards and Science, Daejeon, 34113, Korea

    Thuy Thi Nguyen, Yeongho Kim, Suho Park & Sang Jun Lee

  2. Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Korea

    Thuy Thi Nguyen & Eui-Tae Kim

  3. Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi, 100000, Vietnam

    Thuy Thi Nguyen & Liem Quang Nguyen

  4. Department of Nano Science, University of Science and Technology, Daejeon, 34113, Korea

    Yeongho Kim, Suho Park & Sang Jun Lee

  5. Department of Physics, Yeungnam University, Gyeongsan-si, 38541, Korea

    Hyun Jun Jo & Jong Su Kim

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  1. Thuy Thi Nguyen
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Correspondence to Sang Jun Lee or Eui-Tae Kim.

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Nguyen, T.T., Kim, Y., Park, S. et al. Design and growth of InAsP metamorphic buffers for InGaAs thermophotovoltaic cells. J. Korean Phys. Soc. 78, 1147–1152 (2021). https://doi.org/10.1007/s40042-021-00152-9

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  • DOI: https://doi.org/10.1007/s40042-021-00152-9

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