Abstract
The results of optimization of the design and growth conditions of an In x Al1–xAs metamorphic buffer layer with a high In content (x = 0.05–0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 × 10 μm) and density of threading dislocations of 5 × 107 cm–2 are found in the samples with a convex-graded metamorphic buffer layer.
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Original Russian Text © V.A. Solov’ev, M.Yu. Chernov, A.A. Sitnikova, P.N. Brunkov, B.Ya. Meltser, S.V. Ivanov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 1, pp. 127–132.
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Solov’ev, V.A., Chernov, M.Y., Sitnikova, A.A. et al. Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001). Semiconductors 52, 120–125 (2018). https://doi.org/10.1134/S1063782618010232
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DOI: https://doi.org/10.1134/S1063782618010232