Abstract
This study describes the fabrication of p-Cu2O/n-MZO/FTO heterojunctions by using a simple two-step electrodeposition method. Electronic, microstructural, morphological, optical, and electrical properties have been systematically investigated by using a variety of analysis techniques. Mott–Schottky analysis indicated p-type conductivity for Cu2O and n-type conductivity for ZnO. Analysis revealed the decrease of the conduction band offset at the Cu2O/MZO interface with the contribution of Mg doping approach, which accounts for the upward movement of the conduction band edges of MZO layers. X-ray diffraction indicated that Cu2O and ZnO films were polycrystalline in nature with strong cubic Cu2O(111) and wurtzite ZnO(002)-oriented phases. Morphological analyses revealed that Mg doping could produce finer microstructures and improve the surface flatness of films. The optical measurement indicated that Mg doping enable the band gap engineering of ZnO films and the design of high-performance photovoltaic window layers. Current–voltage plots showed that Au/p-Cu2O/n-ZnO(MZO)/FTO heterojunctions exhibited an excellent rectifying behavior and their electrical performance can be effectively controlled by using Mg doping approach.
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Acknowledgements
This work was supported by the laboratory of Chemistry, Molecular Engineering and Nanostructures, Ferhat Abbas-Sétif 1 University, Algeria, which we thank. We would like to express our sincere thanks to Amor Azizi and Rachid Siab for their assistance and support.
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Kara, R., Nazir, R. Performance improvement of an all electrochemically constructed p-type Cu2O-based heterojunctions using high-quality n-type MZO thin films. J IRAN CHEM SOC 20, 2849–2860 (2023). https://doi.org/10.1007/s13738-023-02881-z
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DOI: https://doi.org/10.1007/s13738-023-02881-z