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Preparation and Photoelectric Properties of Silver Nanowire/ZnO Thin Film Ultraviolet Detector

  • Original Article - Electronics, Magnetics and Photonics
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Abstract

Ultraviolet (UV) detectors have important applications in many fields. ZnO is an excellent semiconductor material for the preparation of UV detectors because of its large direct gap in forbidden bandwidth, its intrinsic response band in the UV region, and its high exciton binding energy. In this paper, high-performance ZnO thin films with the optically advantageous nonpolar structure were prepared by using an atomic layer deposition, and the dominant crystal plane gradually changes from the amorphous phase to the (100) crystal plane. The conventional photoconductor structure ZnO UV detector was enhanced by the surface plasmon exciton effect of Ag nanostructure. When the operating voltage is 5 V and the response light is 350 nm, there is a maximum optical responsiveness of up to 131 A/W. The UV/visible rejection ratio can reach 1824 times. When the ZnO thin film deposition thickness is 400 deposition cycles and about 72 nm, the ZnO thin film UV detector obtains the highest responsiveness (5 V, 365 nm) of 365 A/W. Comparing the photovoltaic performance of the ZnO thin-film detector with the enhanced ZnO thin-film detector and its optimal response wavelength, it is found that the enhanced ZnO thin-film detector increased the photoresponse value by about 100 times. The optimal response wavelength in the UV region is blue-shifted, and the UV-visible rejection ratio and optical response rate are significantly improved.

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The raw/processed data required to reproduce these findings cannot be shared at this time due to technical limitations.

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Acknowledgements

The authors acknowledge the financial support from the Heilongjiang Provincial Natural Science Foundation of China (YQ2022E024), the National Key Research and Development Program of China (2020YFE0205300), the Fundamental Research Funds for the Central Universities (AUGA5710051221).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China

    Zhenfeng Li, Hongzhi Zhou, Zhiyuan Shi, Rongqing Li, Peng He & Shuye Y. Zhang

  2. The 52nd Research Institute of China Electronics Technology Group Corporation, Hangzhou, 310000, China

    Wei Xiao

  3. Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, China

    Jia Zhang & Yang Li

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  1. Zhenfeng Li
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  2. Wei Xiao
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  3. Hongzhi Zhou
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  4. Zhiyuan Shi
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  5. Rongqing Li
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  6. Jia Zhang
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  7. Yang Li
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  8. Peng He
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  9. Shuye Y. Zhang
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Correspondence to Peng He or Shuye Y. Zhang.

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Li, Z., Xiao, W., Zhou, H. et al. Preparation and Photoelectric Properties of Silver Nanowire/ZnO Thin Film Ultraviolet Detector. Electron. Mater. Lett. 19, 415–423 (2023). https://doi.org/10.1007/s13391-023-00421-8

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  • DOI: https://doi.org/10.1007/s13391-023-00421-8

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