Abstract
Thermal treatment is an effective way to decrease the resistivity and internal stress by inducing grain growth accompanied with redistribution of embedded impurities. With the narrowing of Cu interconnects in IC packaging, the increased resistance is becoming the main issue that hindering the electrical performance of IC. Herein, a laser annealing method by liner scanning (LALS) to anneal the Cu interconnects were reported which provide a gradient thermal field for the crystallographic/microstructure transition. The impacts of laser annealing on the sheet resistance of the electroplating Cu films were investigated in aspects of microstructure and phase field simulation. Cu films treated by LALS owned larger average grain size, better recrystallization fraction, and significantly higher average grain aspect ratio than conventional annealing, which indicated the increased driving force for grain boundaries evolution by LALS method. This study exhibited the direct evidence on the impacts of laser annealing process on the resistance of electroplated Cu films. The laser annealing process with a local temperature gradient caused a significant decline in Cu electrical resistance compared to the conventional annealing process, indicating its extraordinary potential in improving Cu wire conductivity. This work will provide a scientific basis for selecting the post-treatment process for electrodeposited Cu films to achieve ideal electrical properties and microstructure in electronics industry applications.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (51991370) and the National Natural Science Foundation of China (62004124); We also thank the Instrumental Analysis Center of Shanghai Jiao Tong University, for the use of the EBSD and FIB-SEM equipment.
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Tan, L., Han, S., Chen, S. et al. The Evolution of Microstructure and Resistance in Electroplated Copper Films by Linear Integrated Laser Scanning Annealing. Electron. Mater. Lett. 17, 207–214 (2021). https://doi.org/10.1007/s13391-021-00269-w
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DOI: https://doi.org/10.1007/s13391-021-00269-w