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Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

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Abstract

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

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Acknowledgements

This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A1A03012877, 2017R1D1A1B03032158).

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Authors and Affiliations

  1. Quantum Functional Semiconductor Research Center, Dongguk University, Seoul, 04620, South Korea

    Hodoug Joung & Il-Ho Ahn

  2. Department of Physics, Dongguk University, Seoul, 04620, South Korea

    Woochul Yang

  3. Department of Semiconductor Science, Dongguk University, Seoul, 04620, South Korea

    Deuk Young Kim

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  1. Hodoug Joung
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  2. Il-Ho Ahn
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  3. Woochul Yang
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  4. Deuk Young Kim
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Correspondence to Il-Ho Ahn.

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Joung, H., Ahn, IH., Yang, W. et al. Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well. Electron. Mater. Lett. 14, 774–783 (2018). https://doi.org/10.1007/s13391-018-0081-7

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  • DOI: https://doi.org/10.1007/s13391-018-0081-7

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