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Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor

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Abstract

In this work, the high κ ZrxAl1−xOy films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of ZrxAl1−xOy films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of ZrxAl1-xOy gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with ZrxAl1−xOy film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the ZTO/ZrxAl1−xOy interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

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Acknowledgements

The authors would like to acknowledge the financial support given by the Natural Science Foundation of China (61774100, 61674101), Shanghai Science and Technology Commission (15JC1402000, 16010500500, 18JC1410402), the National Science Foundation for Distinguished Young Scholars of China (51725505), Science and Technology Commission of Shanghai Municipality Program (17DZ2281700) and the Shanghai Sailing Program (17YF1406300).

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Authors and Affiliations

  1. School of Material Science and Engineering, Shanghai University, Jiading, Shanghai, 201800, People’s Republic of China

    Jun Li, You-Hang Zhou, De-Yao Zhong, Chuan-Xin Huang & Jian Huang

  2. Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People’s Republic of China

    Jun Li, De-Yao Zhong & Jian-Hua Zhang

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  1. Jun Li
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Correspondence to Jun Li.

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Li, J., Zhou, YH., Zhong, DY. et al. Atomic Layer Deposited ZrxAl1−xOy Film as High κ Gate Insulator for High Performance ZnSnO Thin Film Transistor. Electron. Mater. Lett. 14, 669–677 (2018). https://doi.org/10.1007/s13391-018-0079-1

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