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Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

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Abstract

This paper proposes a new defect engineering concept for low-cost In- and Ga-free zinc tin oxide (ZTO) thin-film transistors (TFTs). This concept is comprised of capping ZTO films with tantalum (Ta) and a subsequent modest thermal annealing treatment at 200 °C. The Ta-capped ZTO TFTs exhibited a remarkably high carrier mobility of 70.8 cm2/Vs, low subthreshold gate swing of 0.18 V/decade, threshold voltage of −1.3 V, and excellent ION/OFF ratio of 2 × 108. The improvement (> two-fold) in the carrier mobility compared to the uncapped ZTO TFT can be attributed to the effective reduction of the number of adverse tailing trap states, such as hydroxyl groups or oxygen interstitial defects, which stems from the scavenging effect of the Ta capping layer on the ZTO channel layer. Furthermore, the Ta-capped ZTO TFTs showed excellent positive and negative gate bias stress stabilities.

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Authors and Affiliations

  1. Department of Electronic Engineering, Hanyang University, Seoul, 04763, Korea

    Sang Tae Kim, Yeonwoo Shin, In Jae Chung & Jae Kyeong Jeong

  2. Research and Development Center, LG Display Co., Paju, 10845, Korea

    Pil Sang Yun & Jong Uk Bae

Authors
  1. Sang Tae Kim
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  2. Yeonwoo Shin
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  3. Pil Sang Yun
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  4. Jong Uk Bae
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  5. In Jae Chung
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  6. Jae Kyeong Jeong
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Correspondence to Jae Kyeong Jeong.

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Kim, S.T., Shin, Y., Yun, P.S. et al. Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors. Electron. Mater. Lett. 13, 406–411 (2017). https://doi.org/10.1007/s13391-017-1613-2

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  • DOI: https://doi.org/10.1007/s13391-017-1613-2

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