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Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

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Abstract

A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (I DS,max) of 700 mA/mm at a gate bias voltage (V GS) of 0 V and a maximum transconductance (g m,max) of 190 mS/mm at drain-source voltage (V DS) of 5 V, was analyzed at temperatures ranging from 210 K to 420 K. It was found that I DS,max and g m,max have weak temperature dependence with a power-law relation of ~T −0.5, owing to suppressed optical phonon scattering. The threshold voltage (V th) was found to be stable under increasing temperatures owing to the use of a semi-insulating AlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs are promising candidates for high-temperature electronics applications.

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Authors and Affiliations

  1. School of Semiconductor and Chemical Engineering, and Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Korea

    Seongjun Kim & Hyunsoo Kim

  2. School of Chemical Engineering, Yeungnam University, Gyeongsan, 38541, Korea

    Kwang-Soon Ahn

  3. Department of Mechanical Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX, 77204-4006, USA

    Jae-Hyun Ryou

Authors
  1. Seongjun Kim
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  2. Kwang-Soon Ahn
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  3. Jae-Hyun Ryou
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  4. Hyunsoo Kim
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Correspondence to Kwang-Soon Ahn or Hyunsoo Kim.

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Kim, S., Ahn, KS., Ryou, JH. et al. Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors. Electron. Mater. Lett. 13, 302–306 (2017). https://doi.org/10.1007/s13391-017-1606-1

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  • DOI: https://doi.org/10.1007/s13391-017-1606-1

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