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Switching characteristics of TaO x -based one diode-one resistor for crossbar memory application

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Abstract

One diode-one resistor (1D1R) memory array consisting of Pt/TaO x /Al memory element and GaAs selection diode was firstly demonstrated. The resistive switching behavior of the memory devices with variety of active areas from 5 μm to 50 μm has been investigated. It was found that the forming voltage decreases with the memory element being scaled and the voltage value was in a range of 3 – 11.5 V. The reset current was in range of 3.6 – 11 mA range. The resistance ratio between the high-resistance state (HRS) and low-resistance state (LRS) fluctuates between 102 – 106. The data retention performance in 1×105 s was evaluated for maintaining resistance ratio between HRS and LRS. For a 10% readout margin in an N × N crossbar array, the maximum array size for the 1D1R with diameter of 5 μm in each single cell was estimated to ∼4.5 × 103 and it could be further expanded with improved forward-to-reverse resistance ratio (RLRS_R/RLRS_F).

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Authors and Affiliations

  1. Institute of Materials Research Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 3 Research Link, 117602, Singapore, Singapore

    Y. J. Jin, C. K. Chia, S. J. Wang & D. Z. Chi

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore, Singapore

    Z. Xu & S. F. Yoon

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  1. Y. J. Jin
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  2. Z. Xu
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  3. S. F. Yoon
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  4. C. K. Chia
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  5. S. J. Wang
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Correspondence to Y. J. Jin.

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Jin, Y.J., Xu, Z., Yoon, S.F. et al. Switching characteristics of TaO x -based one diode-one resistor for crossbar memory application. Electron. Mater. Lett. 12, 365–370 (2016). https://doi.org/10.1007/s13391-016-5369-x

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  • DOI: https://doi.org/10.1007/s13391-016-5369-x

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