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High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

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Abstract

A highly efficient n-Si/p-Cu2O core-shell (C-S) nanowire (NW) photodiode was fabricated using Cu2O grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Ordered Si nanowires arrays were fabricated by nano-sphere lithography to pattern metal catalysts for the metal-assisted etching of silicon, resulting in a Si NW arrays with a good arrangement, smooth surface and small diameter distribution. The ALD-Cu2O thin films were grown using a new non-fluorinated Cu precursor, bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu), and water vapor (H2O) at 140°C. Transmission electron microscopy equipped with an energy dispersive spectrometer confirmed that p-Cu2O thin films had been coated over arrayed Si NWs with a diameter of 150 nm (aspect ratio of ∼7.6). The C-S NW photodiode exhibited more sensitive photodetection performance under ultraviolet illumination as well as an enhanced photocurrent density in the forward biasing region than the planar structure diode. The superior performance of C-S NWs photodiode was explained by the lower reflectance of light and the effective carrier separation and collection originating from the C-S NWs structure.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 38541, Korea

    Hangil Kim & Soo-Hyun Kim

  2. School of Electrical Engineering, Yonsei University, Seoul, 03722, Korea

    Kyung Yong Ko & Hyungjun Kim

  3. Graduate School of EEWS, KAIST, Daejeon, 34141, Korea

    Jaehoon Kim & Jihun Oh

  4. Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea

    Han-Bo-Ram Lee

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  1. Hangil Kim
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  2. Soo-Hyun Kim
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  3. Kyung Yong Ko
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  4. Hyungjun Kim
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  5. Jaehoon Kim
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  6. Jihun Oh
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  7. Han-Bo-Ram Lee
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Correspondence to Soo-Hyun Kim.

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Kim, H., Kim, SH., Ko, K.Y. et al. High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array. Electron. Mater. Lett. 12, 404–410 (2016). https://doi.org/10.1007/s13391-016-5356-2

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  • DOI: https://doi.org/10.1007/s13391-016-5356-2

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