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Stability study of solution-processed zinc tin oxide thin-film transistors

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Abstract

In this study, the environmental dependence of the electrical stability of solution-processed n-channel zinc tin oxide (ZTO) thin-film transistors (TFTs) is reported. Under a prolonged negative gate bias stress, a negative shift in threshold voltage occurs in atmospheric air, whereas a negligible positive shift in threshold voltage occurs under vacuum. In the positive bias-stress experiments, a positive shift in threshold voltage was invariably observed both in atmospheric air and under vacuum. In this study, the negative gate-bias-stress-induced instability in atmospheric air is explained through an internal potential in the ZTO semiconductor, which can be generated owing to the interplay between H2O molecules and majority carrier electrons at the surface of the ZTO film. The positive bias-stress-induced instability is ascribed to electron-trapping phenomenon in and around the TFT channel region, which can be further augmented in the presence of air O2 molecules. These results suggest that the interaction between majority carriers and air molecules will have crucial implications for a reliable operation of solution-processed ZTO TFTs.

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Authors and Affiliations

  1. Department of Electronic Engineering, Hallym University, Chuncheon, 200-702, Korea

    Xue Zhang, Jean Pierre Ndabakuranye & Jaehoon Park

  2. Department of Electrical, Information and Control Engineering, Hongik University, Seoul, 121-791, Korea

    Dong Wook Kim & Jong Sun Choi

Authors
  1. Xue Zhang
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  2. Jean Pierre Ndabakuranye
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  3. Dong Wook Kim
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  4. Jong Sun Choi
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  5. Jaehoon Park
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Correspondence to Jaehoon Park.

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Zhang, X., Ndabakuranye, J.P., Kim, D.W. et al. Stability study of solution-processed zinc tin oxide thin-film transistors. Electron. Mater. Lett. 11, 964–972 (2015). https://doi.org/10.1007/s13391-015-5209-4

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  • DOI: https://doi.org/10.1007/s13391-015-5209-4

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