Abstract
A 50-nm thick polycrystalline Si film was fabricated by the crystallization of anamorphous Si film using silicide-enhanced rapid thermal annealing (SERTA). The amorphous Si film was deposited on a 5-nm thick polycrystalline Si seed layer containing nickel silicide precipitates in grain boundary areas. With the help of the silicide precipitates, the RTA temperature decreased from 730 to 680°C and the grain size of the crystallized polycrystalline Si film increased to 1.4 — 2.2 μm. Few defects were found within the grains and the Ni concentration in the polycrystalline film decreased to 1 × 1018 cm−3 due to the very-thin seed layer that contained nickel silicide precipitates. As a result, the field-effect hole mobility in the p-channel poly-Si thin film transistors (TFTs), fabricated employing the polycrystalline Si film, was as high as 169 cm2/V∙s at a drain voltage of V D = −0.1 V; the subthreshold swing was as small as 0.24 V/decade. The minimum leakage current at V D = 5V was 1.5 × 10−10 A with very good diode characteristics.
Similar content being viewed by others
References
C. W. Tang, SID Interrn. Symp. Dig. Tech. 181 (1996).
J. J. Lih, C. F. Sung, C. H. Li, T. H. Hsiao, and H. H. Lee, J. Soc. Information Display 12, 367 (2004).
C. P. Chang and Y. S. Wu, Electron. Lett. 44, 1157 (2008).
A. T. Voutsas, Appl. Surf. Sci. 208–209, 250 (2003).
T. J. King and K. C. Saraswat, IEEE Trans Electron Devices 13, 309 (1992).
W. Lee and S. K. Joo, IEEE Electron Devices Lett. 17, 160 (1996).
W. Byun, S. W. Son, Y. W. Lee, H. M. Kang, S. A. Park, W. C. Lim, T. Li, and S. K. Joo, J. Electrochem. Soc. 158, J354 (2011).
J. H. Eom, K. U. Lee, and B. T. Ahn, Electrochem. Solid-State Lett. 8, G65 (2005).
K. M. Ahn, S. M. Kang, and B. T. Ahn, J. Electrochem. Soc. 158, H29 (2012).
K. M. Ahn, S. M. Kang, and B. T. Ahn, Current Appl. Phys. 12, 1454 (2012).
S. M. Kang, K. M. Ahn, and B. T. Ahn, J. Electrochem. Soc. 159, H29 (2012).
C. D. Kim, C. Y. Kim, S. W. Lee, H. S. Seo, and I. B. Kang, J. Korean Phys. Soc. 54, 446 (2009).
M. Bonnel, N. Duhamel, M. Guendouz, L. Haji, B. Loisel, and P. Ruault, Jpn. J. Appl. Phys. 30, L1924 (1991).
L. Plevert, S. Mottet, M. Bonnel, and N. Duhamel, Jpn. J. Appl. Phys. 34, 419 (1995).
Y. H. Yang, K. M. Ahn, and B. T. Ahn, Electrochem. Solid-State Lett. 13, J92 (2010).
S. H. Han, I. S. Kang, N. K. Song, M. S. Kim, J. S. Lee, and S. K. Joo, IEEE Trans. Electron Devices 54, 2546 (2007).
C. W. Byun, S. W. Son, Y. W. Lee, H. M. Kang, S. A. Park, W. C. Lim, T. Li, and S. K. Joo, J. Electrochem. Soc. 159, J115 (2012).
J. C. Kim, J. H. Choi, S. S. Kim, K. M. Kim, and J. Jang, Appl. Phys. Lett. 5068, 83 (2003).
C. H. Kim, K. S. Sohn, and J. Jang, J. Appl. Phys. 81, 8084 (1997).
C. W. Byun, S. W. Son, Y. W. Lee, and S. K. Joo, Electronic Mater. Lett. 8, 251 (2012).
C. W. Byun, A. M. Reddy, S. S. Son, and S. K. Joo, Electronic Mater. Lett. 8, 369 (2012).
C. W. Byun, A. M. Reddy, S. W. Son, Y. W. Lee, and S. K. Joo, IEEE Trans. Electr. Dev. 60, 4 (2013).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yang, Y.H., Ahn, K.M., Kang, S.M. et al. Fabrication of a high-performance poly-Si thin-film transistor using a poly-Si film prepared by silicide-enhanced rapid thermal annealing process. Electron. Mater. Lett. 10, 1081–1085 (2014). https://doi.org/10.1007/s13391-014-4095-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13391-014-4095-5