Abstract
Fluxless GaAs-on-Si wafer bonding using Ag/Sn solder was investigated to realize uniform and void-free heterogeneous material integration. The effects of the diffusion barrier, Ag/Sn thickness, and Ar plasma treatment were studied to achieve the optimal fluxless bonding process. Pt on a GaAs wafer and Mo on a Si wafer act as diffusion barriers by preventing the flow of Ag/Sn solder into both the wafers. The bonding strength is closely related to the Ag/Sn thickness and Ar plasma treatment. A shear strength test was carried out to investigate the bonding strength. Under identical bonding conditions, the Ag/Sn thickness was optimized to achieve higher bonding strength and to avoid the formation of voids due to thermal stress. An Ar plasma pretreatment process improved the bonding strength because the Ar plasma removed carbon contaminants and metal-oxide bonds from the metal surface.
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Eo, SH., Kim, DS., Jeong, HJ. et al. Fluxless eutectic bonding of GaAs-on-Si by using Ag/Sn solder. Electron. Mater. Lett. 9, 787–791 (2013). https://doi.org/10.1007/s13391-013-6012-8
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DOI: https://doi.org/10.1007/s13391-013-6012-8