Abstract
Undoped and In-doped nanocrystalline tungsten oxide (WO3) thin films were prepared by chemical spray pyrolysis using tungsten hexachloride (WCl6) dissolved in N-N dimethylformamide as the host precursor solution and indium chloride (InCl3) as the source of dopant. XRD analyses confirm the monoclinic phase of the prepared films with the predominance of triplet (002), (020) and (200) in the spectra. On indium doping, the crystallinity of the films decreases and becomes minimum at 1.5 at. % doping. EDX analyses confirm the incorporation of In dopants into the WO3 lattice network. SEM micrographs show nonspherical grains over the surface and the average grain size decreases with higher In doping. AFM images of the films exhibit large nicely separated conical columnar grains (except in 1 at. %) throughout the surface with coalescence of some columnar grains at few places. UV-visible measurements reveal that the optical transmittance of the 1 at. % In-doped film increases significantly throughout the wavelength range 300–800 nm relative to that of the undoped film. Room temperature photoluminescence spectra show pronounced enhancement in the peak intensity of NBE emission on In doping. Electrical conductivity has been found to increase on In doping.
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M. Kovendhan, D. P. Joseph, E. S. Kumar, A. Sendilkumar, P. Manimuthu, S. Sambasivam, C. Venkateswaran, and R. Mohan, Appl. Surf. Sci. 257, 8127 (2011).
S. Vallejos, V. Khatko, K. Aguir, K.A. Ngo, J. Calderer, I. Gràcia, C. Cané, E. Llobet, and X. Correig, Sens. Actuators, B 126, 573 (2007).
N. D. Baydoğan, E. Ö. Zayim, and A. B. Tuğru, Nucl. Instrum. Methods Phys. Res., Sect. B 264, 302 (2007).
N. Li, T. Stubhan, N. A. Luechinger, S. C. Halim, G. J. Matt, T. Ameri, and C. J. Brabec, Org. Electron. 13, 2479 (2012).
L. Yang, D. Ge, J. Zhao, Y. Ding, X. Kong, and Y. Li, Sol. Energy Mater. Sol. Cells 100, 251 (2012).
S. Dabbous, T. B. Nasrallah, J. Ouerfelli, K. Boubaker, M. Amlouk, and S. Belgacem, J. Alloys Compd. 487, 286 (2009).
R. Sivakumar, A. M. E. Raj, B. Subramanian, M. Jayachandran, D. C. Trivedi, and C. Sanjeeviraja, Mater. Res. Bull. 39, 1479 (2004).
S. Songara, V. Gupta, M. K. Patra, J. Singh, L. Saini, G.S. Gowd, S. R. Vadera, and N. Kumar, J. Phys. Chem. Solids 73, 851 (2012).
M. Ranjbar, S. Fardindoost, S. M. Mahdavi, A. Irajizad, and N. Tahmasebi, Sol. Energy Mater. Sol. Cells 95, 2335 (2011).
Q. Chen, J. Li, B. Zhou, M. Long, H. Chen, Y. Liu, W. Cai, and W. Shangguan, Electrochem. Commun. 20, 153 (2012).
A. Stepanovich, K. Sliozberg, W. Schuhmann, and A. Ludwig, Int. J. Hydrogen Energy 37, 11618 (2012).
C. W. Lai and S. Sreekantan, Mater. Sci. Semicond. Process. 16, 303 (2013).
X. He, J. Li, X. Gao, and L. Wang, Sens. Actuators B 93 463 (2003).
C. G. Granqvist, Sol. Energy Mater. Sol. Cells 60, 201 (2000).
S. R. Bathe and P. S. Patil, Sol. Energy Mater. Sol. Cells 91, 1097 (2007).
H. Yang, F. Shang, L. Gao, and H. Han, Appl. Surf. Sci 253, 5553 (2007).
M. Deepa, A. K. Srivastava, T. K. Saxena, and S. A. Agnihotry, Appl. Surf. Sci 252, 1568 (2005).
J. Garcia-Canadas, I. Mora-Sero, F. Fabregat-Santiago, J. Bisquert, and G. Garcia-Belmonte, J. Electroanal. Chem. 565, 329 (2004).
M. Deepa, P. Singh, S. N. Sharma, and S. A. Agnihotry, Sol. Energy Mater. Sol. Cells 90, 2665 (2006).
A. H. Jayatissa, S. T. Cheng, and T. Gupta, Mater. Sci. Eng. B 109, 269 (2004).
C. H. Hsu, C. C. Chang, C. M. Tseng, C. C. Chan, W. H. Chao, Y. R. Wu, M. H. Wen, Y. T. Hsieh, Y. C. Wang, C. L. Chen, M. J. Wang, and M. K. Wu, Sens. Actuators, B 186, 193 (2013).
M. H. Yaacob, M. Z. Ahmad, A. Z. Sadek, J. Z. Ou, J. Campbell, K. K. zadeh, and W. Wlodarski, Sens. Actuators, B 177, 981 (2012).
T. Tesfamichael, A. Ponzoni, M. Ahsan, and G. Faglia, Sens. Actuators, B 168, 345 (2012).
S. K. Biswas and J. O. Baeg, Int. J. Hydrogen Energy 38, 3177 (2013).
J. M. Ortega, A. I. Martinez, D. R. Acosta, and C. R. Magana, Sol. Energy Mater. Sol. Cells 90, 2471 (2006).
T. Tesfamichael, M. Arita, T. Bostrom, and J. Bell, Thin Solid Films 518, 4791 (2010).
J. Gaury, E. M. Kelder, E. Bychkov, and G. Biskos, Thin Solid Films 534, 32 (2013).
Y. Sun, C. J. Murphy, K. R. R. Gil, E. A. R. Garcia, J. M. Thornton, N. A. Morris, and D. Raftery, Int. J. Hydrogen Energy 34, 8476 (2009).
J. Zhang, S. A. Wessel, and K. Colbow, Thin Solid Films 185, 265 (1990).
A. S. Riad, S. A. Mahmoud, and A. A. Ibrahim, Physica B 296, 319 (2001).
M. A. Wahab, Solid State Physics, (Second Edition), p. 32, Narosa Publishing House, New Delhi (2010).
C. S. Prajapati and P. P. Sahay, Appl. Surf. Sci. 258, 2823 (2012).
A. Goswami, Thin Film Fundamentals, p. 420, New Age International, New Delhi (2005).
H. Kamal, E. K. Elmaghraby, S. A. Ali, and K. A. Hady, J. Cryst. Growth 262, 424 (2004).
D. P. Joseph, M. Saravanan, B. Muthuraaman, P. Renugambal, S. Sambasivam, S. P. Raja, P. Maruthamuthu, and C. Venkateswaran, Nanotechnol. 19, 485707 (2008).
A. Subrahmanyam and A. Karuppasamy, Sol. Energy Mater. Sol. Cells 91, 266 (2007).
F. Urbach, Phys. Rev. 92, 1324 (1953).
Y. M. Zhao, W. B. Hu, Y. D. Xia, E. F. Smith, Y. Q. Zhu, C. W. Dunnill, and D. H. Gregory, J. Mater. Chem. 17, 4436 (2007).
M. Feng, A. L. Pan, H. R. Zhang, Z. A. Li, F. Liu, H. W. Liu, D. X. Shi, B. S. Zou, and H. J. Gao, Appl. Phys. Lett. 86, 141901 (2005).
K. Lee, W. S. Seo, and J. T. Park, J. Am. Chem. Soc. 125, 3408 (2003).
B. Zhang, C. Cao, H. Qui, Y. Xu, Y. Wang, and H. Zhu, Chem. Lett. 34, 154 (2005).
S. Rajagopal, D. Nataraj, D. Mangalaraj, Y. Djaoued, J. Robichaud, and O. Y. Khyzhun, Nanoscale Res. Lett. 4, 1335 (2009).
Y. Chen, D. M. Bagnall, H. J. Koh, K. T. Park, K. Hiraga, Z. Zhu, and T. Yao, J. Appl. Phys. 84, 3912 (1998).
C. S. Prajapati, A. Kushwaha, and P. P. Sahay, Mater. Res. Bull. 48, 2687 (2013).
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Mukherjee, R., Kushwaha, A. & Sahay, P.P. Spray-deposited nanocrystalline WO3 thin films prepared using tungsten hexachloride dissolved in N-N dimethylformamide and influence of in doping on their structural, optical and electrical properties. Electron. Mater. Lett. 10, 401–410 (2014). https://doi.org/10.1007/s13391-013-3221-0
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DOI: https://doi.org/10.1007/s13391-013-3221-0