Abstract
Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage (V T ), subthreshold slope (SS) and transconductance (g m ), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and g m , program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.
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Lee, SY., Oh, JS., Yang, SD. et al. Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2 or Si3N4 buffer layer. Electron. Mater. Lett. 9 (Suppl 1), 23–27 (2013). https://doi.org/10.1007/s13391-013-3176-1
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DOI: https://doi.org/10.1007/s13391-013-3176-1