Abstract
In this work, we analyzed and correlated the hysteresis characteristics and instability under negative bias temperature instability (NBTI) stress in p-channel low-temperature poly-silicon (LTPS) thin-film transistors (TFTs). Positive V TH shifts were observed under the NBTI stress. The hysteresis does not appear to be affected by the NBTI stress; however, when the VG stress voltage is −40 V at 100°C, the hysteresis increases as the stress time increases and V TH shifts with sub-threshold slope (SS) degradation. The hysteresis may increase under the extreme stress condition due to the generation of trap-states.
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Kim, YM., Jeong, KS., Yun, HJ. et al. Investigation of the instability of low-temperature poly-silicon thin film transistors under a negative bias temperature stress. Electron. Mater. Lett. 9 (Suppl 1), 13–16 (2013). https://doi.org/10.1007/s13391-013-3173-4
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DOI: https://doi.org/10.1007/s13391-013-3173-4