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Effect of aluminum doping on a solution-processed zinc-tin-oxide thin-film transistor

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Abstract

The doping effect of aluminum (Al) on a solution-processed zinc-tin-oxide (Al-ZTO) film was examined. The solution processing temperature and aluminum doping concentration were optimized. The following optimal electrical properties with 0.0025 M Al doping at a processing temperature of 500°C were obtained; a mobility of 5.41 cm2/Vs, a current ratio of Ion/Ioff of 107, a threshold voltage of 2.46 V, and a subthreshold slope of 0.48 V/dec with better bias stability. Al doping into the ZTO TFTs improved the electrical properties and bias stability due to the control of free charge carriers without suppressive atoms.

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Authors and Affiliations

  1. Department of Display Engineering, Hoseo University, Chungnam, 336-795, Korea

    Yong-Gu Lee & Woon-Seop Choi

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  1. Yong-Gu Lee
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  2. Woon-Seop Choi
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Correspondence to Woon-Seop Choi.

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Lee, YG., Choi, WS. Effect of aluminum doping on a solution-processed zinc-tin-oxide thin-film transistor. Electron. Mater. Lett. 9, 719–722 (2013). https://doi.org/10.1007/s13391-013-2185-4

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  • DOI: https://doi.org/10.1007/s13391-013-2185-4

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