Abstract
Bismuth-telluride-based materials have excellent room-temperature thermoelectric properties. In this study, the composition of Bi-Sb-Te thin films deposited by RF magnetron sputtering was systematically varied across a single wafer. X-ray diffraction, field emission-scanning electron microscopy (FE-SEM, JEOL, JSM-7000F), energy dispersive x-ray spectroscopy (EDS) and an electron probe x-ray micro analyzer (EPMA, JEOL, JXA 8800R) were then used to investigate the thermoelectric properties of the Bi-Te films as a function of the Te fraction. The Te content of the films ranged from 45% to 87%, and their microstructure and crystal structure varied depending on the Te content. The Seebeck coefficients of the Bi-Sb-Te thin films range from +88 μV/K to +375 μV/K, and the maximum power factor of the films was 105 × 10−5 W/K2 m without post annealing.
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Lee, HJ., Hyun, S., Park, HS. et al. Thermoelectric properties of p-type Bi-Sb-Te thin films with various compositions using a combinatorial method. Electron. Mater. Lett. 7, 45–49 (2011). https://doi.org/10.1007/s13391-011-0307-4
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DOI: https://doi.org/10.1007/s13391-011-0307-4