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Photonic Sensors

, Volume 8, Issue 1, pp 70–79 | Cite as

Influence of annealing on X-ray radiation sensing properties of TiO2 thin film

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Abstract

A recent study shows that the titanium dioxide (TiO2) thin film synthesised by a chemical bath deposition technique is a very useful material for the X-ray radiation sensor. In this work, we reported the influence of annealing on the X-ray radiation detection sensitivity of the TiO2 film. The films were annealed at 333 K, 363 K, 393 K, 473 K, and 573 K for 1 hour. Structural analyses showed that the microstrain and dislocation density decreased whereas the average crystallite size increased with annealing. The band gap of the films also decreased from 3.26 eV to 3.10 eV after annealing. The I-V characteristics record under the dark condition and under the X-ray irradiation showed that the conductivity increased with annealing. The influence of annealing on the detection sensitivity was negligible if the bias voltage applied across the films was low (within 0.2 V‒1.0 V). At higher bias voltage (>1.0 V), the contribution of electrons excited by X-ray became less significant which affected the detection sensitivity.

Keywords

Titanium dioxide (TiO2thin film annealing X-ray sensor 

Notes

Acknowledgment

Authors thank the Department of Physics, Indian Institute of Technology (IIT), Guwahati for providing the XRD facility; Department of Physics, Gauhati University for the UV-Vis absorption spectra; Institute of Advanced Studies in Science and Technology (IASST), Guwahati for the FESEM report.

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© The Author(s) 2017

Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors and Affiliations

  1. 1.Department of PhysicsCotton UniversityGuwahatiIndia
  2. 2.Department of Physics and ElectronicsRhodes UniversityGrahamstownSouth Africa

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