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Effects of hydrogenation and strain on the electronic properties of armchair PtS2 nanoribbons

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Abstract

Electronic structures and transport in armchair PtS2 nanoribbons are studied based on the density functional theory. Bare nanoribbons are magnetic metal with strong negative differential resistance (NDR). In an environment of low hydrogen concentration, the nanoribbons convert to the magnetic semiconductor. The conductance becomes negligible under a bias below 1 V due to the mismatch of wave functions between edge and bulk states. However, a transition from magnetic semiconductor to nonmagnetic metal can occur if a strain of 7% is applied. The stretched nanoribbons then become conductive again with an even stronger NDR. The hydrogen concentration can be used to further modulate the energy gap, the edge magnetism, and conductivity by varying the adsorbed H atoms on the edge. Our study highlights the potential of armchair PtS2 nanoribbons for spintronic nanodevices controlled by both strain and hydrogenation.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61674110).

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  1. Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou, 215006, China

    Fu-Yong Wang & Xue-Feng Wang

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  1. Fu-Yong Wang
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  2. Xue-Feng Wang
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Correspondence to Xue-Feng Wang.

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Wang, FY., Wang, XF. Effects of hydrogenation and strain on the electronic properties of armchair PtS2 nanoribbons. Appl Nanosci 11, 1737–1746 (2021). https://doi.org/10.1007/s13204-021-01834-3

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  • DOI: https://doi.org/10.1007/s13204-021-01834-3

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