Abstract
Integration of PV systems with distribution networks causes some technical challenges to the electrical grid and the distribution network. Most of the conducted researches concentrate on the long horizon impacts (hourly and daily based data). This study aims to capture the extreme technical impacts of PV grid integration on the distribution network at small time scale (few minutes) such that optimum mitigation techniques can be selected. The study assumes that the instantaneous peak power that would be generated from the PV array is considered constant (does not vary) for a small time frame such that the distribution network is subjected to the ultimate possible impacts (extreme impacts). Consequently, the extreme impacts are determined when the PV array produces the peak (extreme) power corresponding to the rating of installed PV array. The paper investigates the influence of both PV size (penetration level) and PV location (siting) on several technical issues such as: voltage profile at different buses, power losses across cables and short circuit currents at different nodes subjected to symmetrical fault conditions. In addition, the impacts on the total harmonic distortion (THD) of buses voltages and currents have been computed. The 3-Φ grid-connected inverter is controlled by instantaneous power control strategy to adjust the penetration level to the desired value. The obtained results indicate that the increase in PV penetration level improves the voltage profile along the network nodes and leads to a reduction in power losses across the cables as well. However, the PV grid integration has adverse effects on the distribution network protection system since the increase in PV penetration level results in higher values of the short circuit currents under symmetrical fault conditions compared with the network without renewable resource. Accordingly, the settings of overcurrent relays have to be revised to handle the under-reach (blinding of protection) or over-reach (sympathetic tripping) conditions of the relaying protection system. Moreover, the obtained results indicate that the THDs are negatively affected by the increase of the penetration level. Owing to the results, the PV allocation (PV injecting node) has also its own effects on the distribution network. The overall system is investigated using professional version of PSIM.
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Abbreviations
- P :
-
Active power
- PV :
-
Photovoltaic
- PCC :
-
Point of common coupling
- Q :
-
Reactive power
- SC :
-
Short circuit
- THD :
-
Total harmonic distortion
- h :
-
Harmonic order
- J :
-
Objective function
- Z :
-
Impedance
- MVDI:
-
Maximum voltage deviation index
- FLLR:
-
Feeder loss to load ratio
- KCL:
-
Kirchhoff’s current law
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Appendices
Appendix 1: Simulation parameters
Electrical data of PV module @ STC | |
---|---|
Type | Sunpower E19/320 |
Peak power Pmax | 320 W |
Efficiency | 19.6% |
Rated voltage Vmpp | 54.7 V |
Rated current Impp | 5.86 A |
Open circuit voltage Voc | 64.8 V |
Short circuit current Isc | 6.24 A |
Parameters of cables | |
---|---|
Positive sequence resistance RD | 0.10 Ω/km |
Zero sequence resistance Ro | 0.345 Ω/km |
Positive sequence reactance XD | 0.119 Ω/km |
Zero sequence reactance Xo | 0.2513 Ω/km |
Zero sequence capacitance Co | 0.01 μF/km |
Parameters of 3-Φ filter inductor | |
---|---|
Per phase inductance L | 3 mH/phase |
Equivalent series resistance R | 0.1 Ω/phase |
Rating of main transformer | |
---|---|
Number of phases | 3 phase |
VA rating | 500 kVA |
HT voltage (primary side) | 69 kV |
LT voltage (secondary side) | 12 kV |
Full load power | |
---|---|
Active power | 250 kW |
Reactive power | 120 kVAR |
Appendix 2: Principles of a PV cell
A basic photovoltaic cell is a p-n semiconductor junction. When the PV cell is exposed to sunlight, a dc current is generated. The light-generated current varies linearly with the solar irradiance. The equivalent circuit of the PV cell is shown in Fig. 23, where light dependent (photo-generated) current source Iph is connected in parallel with the internal PN diode. The equivalent circuit of a PV cell has also an equivalent series resistance of a small value. Also, an equivalent shunt resistance of a relatively high value is parallel to the PN diode structure.
The single-diode model shown in Fig. 23 emulates the characteristics of single PV cell with a high precision at high and medium levels of solar irradiance. I–V relationship of PV cell can be obtained using Eq. (24):
where Vcell and Icell are the cell voltage and current respectively; Iph and Io are the photo-generated current and the dark saturation current respectively; RS and RP are the series and parallel resistances respectively; k is Boltzmann’s constant; T is the junction temperature; A is the diode ideality factor; and q is the electron charge.
Moreover, a single PV module composed of several cells connected in series (NS) and have several parallel branches (NP) can be modeled using Eqs. (25), (26) and (27), where I,V and P are the PV module current, voltage and power respectively. G is the solar irradiance in W/m2. The generalized model of a PV module is shown in Fig. 24.
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Azab, M. Intra-minutes technical impacts of PV grid integration on distribution network operation of a rural community under extreme PV power delivery. Energy Syst 11, 213–245 (2020). https://doi.org/10.1007/s12667-018-0307-7
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DOI: https://doi.org/10.1007/s12667-018-0307-7