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Positron annihilation lifetime and doppler broadening spectroscopies studies of defects in nano TiN crystal under gamma irradiation and high temperature

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Abstract

In this study, TiN nanocrystals underwent initial irradiation at room temperature using a 60Co gamma source, employing four absorption doses (50, 200, 900, and 3500 kGy) within a Gamma MRX-25 unit. Subsequently, they were subjected to heating at 1173 K in a Linn™ HT-1800 oven under vacuum conditions of 10–6 Torr for Positron analysis. The investigation into the mechanism of defect formation employed annihilation lifetime and Doppler broadening annihilation spectroscopies. Pertaining to the Positron Annihilation Lifetime Spectroscopy (PALS) studies, two distinct lifetime components were discerned across all samples. The τ1 lifetime component ranged between 155 and 159 ps. A marginal reduction (from 81.67 to 81.51%) was observed in the corresponding I1 intensity. Analysis of the S parameter derived from Doppler Broadening Annihilation Spectroscopy (DBAS) furnished insights into the presence of vacancy defects within the TiN nanocrystals. The diminishing trend in the S parameter with increasing positron energy or depth of positron implantation indicates a decline in the density and concentration of subsurface defects.

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Acknowledgements

The authors express their sincere gratitude to the Azerbaijan Science Foundation for providing financial support through Grant No: AEF-MCG-2022-1(42)-12/03/1-M-03.

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Authors and Affiliations

  1. International Intergovernmental Organization Joint Institute for Nuclear Research, Dubna, Russia, 141980

    Afsun S. Abiyev, Matlab N. Mirzayev, Bakytbek Mauyey & Samir F. Samadov

  2. Innovation and Digital Development Agency, AZ-1073, Baku, Azerbaijan

    Afsun S. Abiyev & Elchin M. Huseynov

  3. Western Caspian University, AZ1001, Baku, Azerbaijan

    Afsun S. Abiyev

  4. Institute of Radiation Problems, Ministry of Science and Education Republic of Azerbaijan, AZ1143, Baku, Azerbaijan

    Elchin M. Huseynov, Matlab N. Mirzayev & Samir F. Samadov

  5. Azerbaijan State University of Economics (UNEC), AZ-1001, Baku, Azerbaijan

    Elchin M. Huseynov

  6. Khazar University, AZ1096, Baku, Azerbaijan

    Matlab N. Mirzayev & Samir F. Samadov

  7. L.N. Gumilyov Eurasian National University, 010008, Astana, Kazakhstan

    Bakytbek Mauyey

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  1. Afsun S. Abiyev
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  2. Elchin M. Huseynov
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  3. Matlab N. Mirzayev
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  5. Samir F. Samadov
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Correspondence to Matlab N. Mirzayev.

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Abiyev, A.S., Huseynov, E.M., Mirzayev, M.N. et al. Positron annihilation lifetime and doppler broadening spectroscopies studies of defects in nano TiN crystal under gamma irradiation and high temperature. Indian J Phys (2024). https://doi.org/10.1007/s12648-024-03229-w

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  • DOI: https://doi.org/10.1007/s12648-024-03229-w

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