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Structural Properties 3

Vacancy Defects Studied with Positron Annihilation Spectroscopy

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

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Abstract

Positron annihilation spectroscopy has been applied to study vacancy defects in Ga2O3. Both positron lifetime and Doppler broadening experiments have been performed, both in bulk single crystals and in thin films. The results show that Ga vacancy defects are efficiently formed in thin film growth and account for the electrical compensation in semi-insulating and highly resistive Ga2O3. Their concentrations are very low in n-type material. In (InxGa1−x)2O3 alloys, the nature and behavior of the cation vacancy defects change from Ga2O3-like to In2O3-like along with the crystalline phase. Further work is important to elucidate the details of the vacancy formation mechanisms and the origins of the exceptionally strongly anisotropic positron annihilation signals.

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Authors and Affiliations

  1. Department of Physics, University of Helsinki, POB 43, 00014, Helsinki, Finland

    Filip Tuomisto

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  1. Filip Tuomisto
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Correspondence to Filip Tuomisto .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Tuomisto, F. (2020). Structural Properties 3. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_21

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