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A new nonlinear dopant kinetic model of memristor and its application

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Abstract

To improve the effectiveness of memristor model in complex network, the drift model of memristor is further optimized. In this paper, based on both the existing nonlinear doping kinetic model and sinusoidal function, a new model is proposed, which agrees with the five criteria for describing the migration characteristics of nonlinear dopant. Secondly, to improve the flexibility of the new model, two in-built control parameters are introduced, and it is verified by using the coupled variable-resistor model proposed by HP research team. The simulation results show that the new model is well matched with the authoritative memristor model. At the same time, by constructing the Simulink model of memristor we have verified the effectiveness of the new model. Finally, the new model is applied to the three-node Hopfield neural network, and the dynamic behaviors of this network have been investigated. In particular, we have introduced an electromagnetic induction coefficient to describe the possible electromagnetic field effect caused by signal transmission in the network. The results will provide a new idea for the memristor to be widely used in complex network, artificial synapse and many other fields.

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Acknowledgements

The project supported by the Natural Science Foundation of Anhui Province, China (No. 1508085MA15), the Key project of cultivation of leading talents in Universities of Anhui Provence (No. gxbjZD2016014), the Innovation and practice research project of graduate students of Anhui Normal University, China (No. 2017cxsj045), the project of Academic and technical leaders candidate of Anhui Province (2017H117), and the Natural Science Foundation of the Anhui Higher Education Institutions (No. KJ2017A331).

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Authors and Affiliations

  1. College of Physics and Electronic Information, Anhui Normal University, Wuhu, 241000, People’s Republic of China

    F Xu, J Q Zhang, S F Huang, J S Zhang, S Q Xie & M S Wang

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  1. F Xu
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  2. J Q Zhang
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  3. S F Huang
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  4. J S Zhang
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  5. S Q Xie
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  6. M S Wang
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Correspondence to J Q Zhang.

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Xu, F., Zhang, J.Q., Huang, S.F. et al. A new nonlinear dopant kinetic model of memristor and its application. Indian J Phys 93, 765–772 (2019). https://doi.org/10.1007/s12648-018-1330-1

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  • DOI: https://doi.org/10.1007/s12648-018-1330-1

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