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Structural and electrical properties of In–Se films deposited by thermal evaporation

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Abstract

Indium–selenium films with different thickness values, ranging from 0.13 to 1.63 μm were prepared by thermal evaporation technique. The films were deposited on heated glass substrates kept at 523 K, followed by annealing at the same temperature under high vacuum (10−5 Torr) for 30 min. The films remained under vacuum for 24 h after evaporation. The structural properties of the films were investigated in terms of X-ray diffraction, energy dispersive X-ray, and scanning electron microscope. The relationship between the room temperature resistivity and the film thickness was investigated. It was found that the resistivity decreased exponentially with film thickness (0.13–0.71 μm) and become constant for values of higher film thickness values. The temperature dependence of the electrical resistivity was also studied in the temperature range 300–420 K for different film thicknesses. Films with a thickness of 0.71 μm were studied for Hall-effect experiment in the temperature range 170–420 K in order to determine Hall charge carriers mobility and charge carriers concentration as well.

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Acknowledgments

The authors are very grateful to Prof. Dr. Z.D. Kovalyk, Head of the Chernovtsy Division for Semiconductor Materials Sciences Francevich Institute for Problems of Materials Sciences, Chernovtsy, Ukraine, for supplying the authors with n-InSe material.

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Authors and Affiliations

  1. Physics Division, Solid State Physics Department, National Research Center, El-Behooth Str., Dokki, Giza, 12622, Egypt

    F. S. Terra, G. M. Mahmoud & Lobna Mourad

  2. Physics Department, Faculty of Science at Tanta, Tanta University, El-Gish Str., Tanta, 311527, Egypt

    A. Tawfik

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  1. F. S. Terra
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  2. G. M. Mahmoud
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  3. Lobna Mourad
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Correspondence to F. S. Terra.

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Terra, F.S., Mahmoud, G.M., Mourad, L. et al. Structural and electrical properties of In–Se films deposited by thermal evaporation. Indian J Phys 86, 1093–1100 (2012). https://doi.org/10.1007/s12648-012-0180-5

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  • DOI: https://doi.org/10.1007/s12648-012-0180-5

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