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Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

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Abstract

The high-temperature X-ray diffraction method showed the presence of two phase states of oxygen in the volume of a single crystal of silicon grown by the Czochralski method: a dissolved (interstitial) state in the composition of “quasimolecules”—SiO2 and a chemically bound (precipitate) state in the composition of silicon dioxide—SiO2; the precipitate state of oxygen in the bulk of silicon is in the form of crystalline SiO2(c), and in the near-surface layer of a single crystal in the amorphous form of SiO2(a). The thermally stimulated transformation of oxygen atoms between dissolved and precipitate states of oxygen in crystalline form in the bulk of a silicon single crystal has been established.

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Data Availability

No datasets were generated or analysed during the current study.

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Acknowledgements

The authors are sincerely grateful to B.S. Yuldashev for constant attention and support at all stages of this scientific research.

Funding

The Fundamental Research Programs of the Uzbekistan Academy of Sciences financially supported this work.

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Authors and Affiliations

  1. Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent, 100214, Uzbekistan

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev & Sh. R. Malikov

  2. Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, 100084, Uzbekistan

    A. S. Saidov, Sh. N. Usmonov & D. V. Saparov

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  1. M. U. Kalanov
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Contributions

M.U. Kalanov: Writing-review & editing, I.I. Sadikov: Writing-original draft, A.V. Khugaev: Validation, Data curation, Sh.R.Malikov: Project administration, A.S. Saidov: Funding acquisition. Sh.N. Usmonov: Supervision. D.V.Saparov: carried out the experiment and writing original manuscript.

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Correspondence to D. V. Saparov.

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Kalanov, M.U., Sadikov, I.I., Khugaev, A.V. et al. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal. Silicon (2024). https://doi.org/10.1007/s12633-024-02985-y

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