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Growth of Polycrystalline n- CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters

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Abstract

In the current study polycrystalline nanosheets of CrSe2 of thicknesses of 100 nm are deposited onto \(p-\) type silicon substrate by a vacuum evaporation technique under a vacuum pressure of 10–5 mbar. Experimental and theoretical structural investigations have shown the preferred growth of trigonal CrSe2. The unit cell parameters being a = b = 3.520 Å,c = 5.889 Å and \(P\overline{3 }m1 \left(164\right)\) fits well with the standards of trigonal CrSe2 structure. Nanosheets of chromium selenide displayed low defect density of the order of 1010 lines/cm2 along the \(a-\) and \(b\) axes. Surface morphology studies have shown that CrSe2 nanosheets is composed of spherical grains of average sizes of 200 nm. Optically the interfacing of the n– type CrSe2 nanosheets with \(p-\) type Si results in formation of a conduction and valence band offsets of 0.95 eV and 0.47 eV, respectively. These band offsets were found sufficient to allow running the Si/CrSe2 interfaces as \(pn\) junction devices. The devices displayed a biasing dependent rectification ratios (asymmetry). The ratios which reached value of 70 can be varied with the applied voltage. Deep analyses of the current transport mechanism of these rectifiers have shown the domination by thermionic and tunneling mechanisms under forward and reverse biasing conditions, respectively. Moreover the pn junction device showed features of band filters with cutoff frequency values suiting gigahertz technology making the device attractive for multifunction operations.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was funded by the University of Jeddah, Jeddah, Saudi Arabia, under grant No. (UJ-23-DR-47). Therefore, the authors thank the University of Jeddah for its technical and financial support .

Funding

This work was funded by the University of Jeddah, Jeddah, Saudi Arabia, under grant No. (UJ-23-DR-47). Therefore, the authors thank the University of Jeddah for its technical and financial support.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia

    Sabah. E. Algarni & Najla. M. Khusayfan

  2. Department of Physics, Arab American University, Jenin, Palestine

    A. F. Qasrawi

  3. Department of Electrical and Electronics Engineering, Istinye University, Istanbul, 34010, Turkey

    A. F. Qasrawi

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  1. Sabah. E. Algarni
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Contributions

S. E. AlGarni win the project. She analyzed the optical part and prepared a literature review on the topic. Prof Najla Khusayfan also win the project and shared effectively in optical data analyses.  Qasrawi AF handled experiments and collected optical and electrical data analysis and shared in all other parts including article editing and reviewing, and carried out the modeling.

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Correspondence to A. F. Qasrawi.

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Algarni, S.E., Qasrawi, A.F. & Khusayfan, N.M. Growth of Polycrystalline n- CrSe2 Nanosheets Onto p –Si Substrates and their Applications as Rectifiers and Gigahertz Band Filters. Silicon 16, 2341–2348 (2024). https://doi.org/10.1007/s12633-023-02842-4

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