Abstract
This study investigates the relationship between thermal shocks on the surface of semiconductor wafers and parameters of thermostimulated mechanical vibrations to develop express methods for diagnosing the thermal behavior of semiconductor devices and structures. We present a hardware and software system for diagnosing degradation processes in sensors operating in long-term stationary pulse modes or in conditions of electrothermal overloads. Examples of test structures on which degradation processes were recorded in thermal shock mode are provided. Bending vibrations of 0.1–3 kHz occur in the wafer during a surface thermal shock. Test structures were used as heat sources, through which single square current pulses with an amplitude of (1–8)·1010 A/m2 and a duration of 50–500 µs were passed. A correlation between the energy of bending vibrations and presence of degradation processes on the semiconductor surface was established. Irreversible degradation processes cause a sharp increase in vibrational energy. The results can be used in the development of methods for diagnosing the thermal behavior of semiconductor structures.
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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.
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Funding
The study was supported by the Russian Science Foundation (Grant No. 22–29-01373).
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Arkady A. Skvortsov – conceptualization, methology, supervision, investigation, data analysis.
Dmitriy O. Varlamov – methology, software.
Vladimir K. Nikolaev – methology, investigation, data acquisition and analysis.
Olga V. Volodina – methology, investigation, data acquisition and analysis.
Anna A. Skvortsova – investigation, data acquisition and analysis.
All authors participated in the preparation and editing of the original draft.
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Skvortsov, A.A., Varlamov, D.O., Nikolaev, V.K. et al. Shock-wave Processes in the Electric Explosion of Thin-Film Systems on Silicon. Silicon 15, 1987–1992 (2023). https://doi.org/10.1007/s12633-022-02147-y
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DOI: https://doi.org/10.1007/s12633-022-02147-y