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L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications

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Abstract

This work presents the design and simulation of a novel double-gate L-shaped Schottky barrier MOSFET (DG-LS-SB-MOSFET). The device uses a low work function metal near source-channel junction and ErSi1.4 at source and drain regions. Simulated results show that DG-LS-SB-MOSFET has successfully improved the SCE parameters and exhibits high on-current (241 µA/µm) and 2.2 × 103 times higher ION/IOFF as that of conventional device (DG-SB-MOSFET). Due to the use of HfO2 as gate oxide, there is a change of 37.5% in sub-threshold swing (SS). DG-LS-SB-MOSFET also shows similar improvements in RF/analog parameters such as output conductance (gd), transconductance generation factor (gm/ID), Early voltage (VEA), intrinsic gain, cut-off frequency (fT), Gain Frequency Product (GFP) and Gain Transconductance Frequency Product (GTFP). Using 2D calibrated simulation, we validated the transfer characteristics of SB-FET. Furthermore, DG-LS-SB-MOSFET based inverter shows a reduction in ON delay of 95.31% and 46.72% in OFF delay in the as compared to the conventional device-based inverter.

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Acknowledgements

The research work is supported by University Grants Commission, Government of India in the form of Junior Research Fellowship (190510736394).

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Authors and Affiliations

  1. Department of Electronics and Instrumentation Technology, University of Kashmir, Srinagar, India

    Shazia Rashid, Faisal Bashir & Farooq A. Khanday

  2. Department of Electronics, Govt. Degree College Sumbal, Sumbal, Jammu and Kashmir, India

    M. Rafiq Beigh

Authors
  1. Shazia Rashid
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  2. Faisal Bashir
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  3. Farooq A. Khanday
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  4. M. Rafiq Beigh
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Contributions

Ms. Shazia Rashid-Conceptualization, Methodology, Software, Investigation, Writing -original draft preparation, Editing, Reviewing; Dr. Faisal Bashir-Data curation, Visualization, Investigation, Software, Editing, Revision; Dr. Farooq A. Khanday-Supervision, Reviewing, Revision and Editing; Dr. M. Rafiq Beigh- Reviewing and Editing.

Corresponding author

Correspondence to Farooq A. Khanday.

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Rashid, S., Bashir, F., Khanday, F.A. et al. L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications. Silicon 15, 205–215 (2023). https://doi.org/10.1007/s12633-022-02006-w

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  • DOI: https://doi.org/10.1007/s12633-022-02006-w

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