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A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET

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Abstract

The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the SCE’s with high graded doping of the channel region. Temperature effects on electrostatic and analog/RF performance of channel modulated junctionless gate all around (CM-JL-GAA) MOSFETs have been explored in this work throughout a temperature range of 200 K to 500 K. The channel length, gate oxide thickness, and gate oxide material of CM-JL-GAA MOSFET has been varied to understand the impact of process parameters on device performance using Silvaco 3D device simulator. The electrostatic and analog/RF parameters have been figure out for the specified temperature range with process parameter variation. When the temperature of CM-JL-GAA MOSFETs is increased from 200 K to 500 K, the analog/RF performance is marginally affected. The intrinsic gain (AV) is negligibly affected (~3 dB) with raised in temperature. The adoption of a high-k gate dielectric improves electrostatic performance such as DIBL, SS and Ion/Ioff and marginal deterioration in the analog/RF performance of CM-JL-GAA MOSFETs, according to this study. With temperature changes, the high-k dielectric has a minor impact on the analog/RF performance of CM-JL-GAA MOSFETs. Hence, the CM-JL-GAA MOSFETs device have better analog/RF performance at higher temperature with high-frequency applications.

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Authors and Affiliations

  1. Department of Electronics Engineering, Rajkiya Engineering College, Sonbhadra, Uttar Pradesh, 231206, India

    Abhinav Gupta

  2. Department of Electronics and Communication Engineering, P.S.I.T. Kanpur, Dr. A P J Abdul Kalam Technical University, Lucknow, Uttar Pradesh, 226031, India

    Vidyadhar Gupta

  3. Department of Applied Science and Humanities, Rajkiya Engineering College, Ambedkar Nagar, Uttar Pradesh, 224122, India

    Amit Kumar Pandey

  4. Department of Electronics and Communication Engineering, M.A.N.I.T, Bhopal, Madhya Pradesh, 462003, India

    Tarun Kumar Gupta

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  1. Abhinav Gupta
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  2. Vidyadhar Gupta
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  4. Tarun Kumar Gupta
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All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data; have been involved in drafting the manuscript or revising it critically for important intellectual content, and have given final approval of the version to be published. Each author has participated sufficiently in work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.

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Correspondence to Amit Kumar Pandey.

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Gupta, A., Gupta, V., Pandey, A.K. et al. A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET. Silicon 14, 10613–10622 (2022). https://doi.org/10.1007/s12633-022-01794-5

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  • DOI: https://doi.org/10.1007/s12633-022-01794-5

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