Abstract
Graphene-based devices show good transfer characteristics, which depend upon the surface morphology of the material and substrate. During fabrication of the device, the substrate morphology is disturbed inappropriately by the surface contamination. In the present study, monolayer Graphene Field Effect Transistor (GFET) has been driven with hydrophobic Hexamethyl Disilazane (HMDS) layer. The HMDS layer is dehydrated before and after the exfoliated monolayer graphene, and the electrical characteristics were measured. The transfer curve of the HMDS coated graphene device demonstrates excellent FET characteristics and prevents contamination from the atmosphere under ambient conditions. Fabrication of GFET device on the hydrophobic substrate enhances the effective ambipolar behavior. It is beginning with an excellent platform and user-friendly device for biosensing applications.
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Acknowledgements
One of the authors (M.A.) would like to thank the National Institute for Materials Science (NIMS), Japan, and Anna University, India, for the award of the International Co-operative Graduate School (ICGS) Fellowship. This study was supported by NIMS Molecule and Material Synthesis Platform in the “Nanotechnology Platform Project” operated by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
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Manoharan Arun Kumar, Ramasamy Jayavel and Mukannan Arivanandhan: Conceptualization; Manoharan Arun Kumar, Ramasamy Jayavel and Mukannan Arivanandhan: investigation; Manoharan Arun Kumar, Ramasamy Jayavel and Mukannan Arivanandhan, Balwinder Raj, N.Mohankumar: resources; Manoharan Arun Kumar, Ramasamy Jayavel: Original draft preparation; Manoharan Arun Kumar, Ramasamy Jayavel and Mukannan Arivanandhan: review and editing; Manoharan Arun Kumar, Ramasamy Jayavel and Mukannan Arivanandhan, Balwinder Raj, N.Mohankumar: Visualization; Ramasamy Jayavel: Supervision;
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We declare that the manuscript entitled “Performance Enhancement and Comparison of Graphene Field Effect Transistor devices coated with HMDS layer” is original, has not been fully or partly published before, and is not currently being considered for publication elsewhere. We confirm that all named authors have read and approved the manuscript. We further ensure that the undersigned has approved the order of authors listed in the manuscript. We understand that the Corresponding Author is the sole contact for the editorial process. The corresponding author “Dr. Manoharan Arun Kumar “ is responsible for communicating with the other authors about the process, submissions of revisions, and final approval of proofs.”
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Kumar, M.A., Jayavel, R., Arivanandhan, M. et al. Performance Enhancement and Comparison of Graphene Field Effect Transistor Devices Coated with HMDS Layer. Silicon 14, 10467–10474 (2022). https://doi.org/10.1007/s12633-022-01773-w
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DOI: https://doi.org/10.1007/s12633-022-01773-w