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Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation

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Abstract

In this paper, for the first time, we have investigated a Dielectric Engineered Schottky Barrier MOSFET (DE-SBMOS) for Biosensor applications. The DE SBMOS uses dielectric engineering and modulation approach to detect biomolecules. The DE SBMOS incorporated the high-k gate dielectric at the source side and low-k gate dielectric at the drain side. In addition, a nano gap cavity is created near the source region by etching the gate metal precisely. The presence of biomolecules in the cavity results in change in drive current of the device. The sensitivity of the proposed device is measured in terms of threshold voltage (VTH), ION current, IOFF current, Subthreshold Swing (SS), and IDS current. In later part, misalignment effect of cavity length with high-k dielectric material length examined and that result in three different modes i.e. Underlapped Biosensor (UBS), Aligned Biosensor (ABS), Overlapped Biosensor (OBS). Based on aforementioned modes, the proposed device shows the optimal choice for OBS mode.

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  1. Department of Electronics and Communication Engineering, Delhi Technological University, Delhi, India

    Rahul Singh, Shweta Kaim, Rani MedhaShree, Anil Kumar & Sumit Kale

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Contributions

Rahul Singh1, Shweta Kaim2, Rani MedhaShree3, Anil Kumar4: Writing, Original draft preparation, Formal Analysis, Investigation, Simulation, Data Curation.

Sumit Kale: Conceptualization, Methodology, Supervision.

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Correspondence to Sumit Kale.

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Singh, R., Kaim, S., MedhaShree, R. et al. Dielectric Engineered Schottky Barrier MOSFET for Biosensor Applications: Proposal and Investigation. Silicon 14, 4053–4062 (2022). https://doi.org/10.1007/s12633-021-01191-4

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