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Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor

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Abstract

This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In a proposed device, we have created a nanogap cavity within the gate dielectric near the source end for sensing biomolecules. Therefore, the modulation of the SB width at the source end occurs due to presence of biomolecules in the form of different dielectric material used to fill the nanogap cavity. Hence, the current flow from source to drain is highly sensitive to the change in properties of dielectric materials. Here, we have investigated the performance of the proposed device in terms of its sensing capability by variation in dielectric constant and, charge density. Also, the performance of the device is observed for different cavity length and, thickness for different drain and source bias. Results show high sensitivity in terms of change in drive current of the device for the variation in the dielectric constant and charge density. Simulations have been performed by the two dimensional SILVACO ATLAS device simulator.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Madanapalle Institute of Technology & Science, Madanapalle, AP, 517325, India

    N. K. Hema Latha & Sumit Kale

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  1. N. K. Hema Latha
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  2. Sumit Kale
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Correspondence to Sumit Kale.

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Latha, N.K.H., Kale, S. Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor. Silicon 12, 2673–2679 (2020). https://doi.org/10.1007/s12633-019-00363-7

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