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Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique

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Abstract

This paper presents the effect of quantum confinement on the potential of short channel mono-layer molybdenum disulfide (MoS2) based transistor using Ritz Galerkin finite element technique. Unlike earlier models, only two iterations are used to obtain the potential. This model makes use of the coupled Poisson-Schrödinger equation by considering quantum mechanical effects for evaluating the potential with the support of Exciton Bohr radius, bandgap, electron energy state, Density of State (DOS), and electron concentration. Furthermore, this coupled equation along with Neumann boundary condition is employed to approximate the wave function of the Schrödinger equation, which is used again in the Poisson equation for calculating the potential. This work accurately predicts the impact of quantum confinement effects in the perpendicular direction of the channel surface.

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Acknowledgments

The authors are grateful to Centre for VLSI Design, Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education (KARE) for supporting this research.

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Authors and Affiliations

  1. Centre for VLSI Design, Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, Tamilnadu, India

    R. Sridevi & J. Charles Pravin

  2. Department of Mathematics, School of Engineering AMRITA Vishwa Vidhyapeetham, Coimbatore, Tamilnadu, India

    A. Ramesh Babu

  3. Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India

    D. Nirmal

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  1. R. Sridevi
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  4. D. Nirmal
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All authors were a major contributor in writing the manuscript.

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Correspondence to J. Charles Pravin.

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Sridevi, R., Pravin, J.C., Babu, A.R. et al. Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique. Silicon 14, 2157–2163 (2022). https://doi.org/10.1007/s12633-021-01010-w

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