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Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics

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A Correction to this article was published on 14 March 2021

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Abstract

This work determines the noise characterization of Indium Arsenide (InAs) based Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMTs) with different gate dielectrics for high-frequency applications. The physical TCAD simulator tool is used to characterize the noise performance of the device architecture using different dielectrics. Here, the effective oxide thickness (EOT) is fixed at 1.5 nm and the noise parameters are analyzed for each dielectric. The proposed device with Aluminium Oxide (Al2O3) as gate dielectric achieved a high cut-off frequency (fT) of 730 GHz and frequency of maximum oscillation (fmax) of 840 GHz at a drain-source voltage of Vds = 0.5 V. Moreover, double gate MOSHEMTs with Al2O3 gate dielectric material has the minimum noise figure (NFmin) of 1.5 dB observed at Vgs = 0.6 V and Vds = 0.5 V. The low noise level output over a wide bandwidth and high-frequency efficiency obtained has increased the feasibility of the device to be used in broadband applications in the design of lower noise amplifiers (LNA).

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References

  1. Akazaki T, Enoki T, Arai K, Umeda Y, Ishii Y (1992) High-frequency performance for sub-0.1 mu m gate InAs-inserted-channel InAlAs/InGaAs HEMT. Electronics Lett 28(13):1230–1231

    Article  Google Scholar 

  2. Wu J, Fang Y, Markman B, Tseng H, Rodwell MJW (April 2018) Lg = 30 nm InAs Channel MOSFETs exhibiting fmax = 410 GHz and ft = 357 GHz. IEEE Electron Device Lett 39(4):472–475

    Article  CAS  Google Scholar 

  3. Poornachandran R, Mohankumar N, Saravana Kumar R, Sujatha G (2019) Sheet-carrier density and I-V analysis of In0.7Ga0.3As/InAs/In0.7Ga0.3As/InAs/In0.7Ga0.3As dual-channel double gate HEMT for THz applications. Int J Numeric Modell

  4. Tsai R, Barsky M, Boos JB, Bennett BR, Lee J, Papanicolaou NA, Magno R, Namba C, Liu PH, Park D, Grundbacher R, Gutierrez A (2003) "Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics," 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003., San Diego, CA, USA, pp. 294-297

  5. Ajayan J, Nirmal D, Mohankumar P, Arivazhagan L (2020) Investigation of impact of passivation materials on the DC/RF performances of InP-HEMTs for terahertz sensing and imaging. Silicon 12:1225–1230

    Article  CAS  Google Scholar 

  6. Mondal A, Roy A, Mitra R et al (2020) Comparative study of variations in gate oxide material of a novel underlap DG MOS-HEMT for analog/RF and high power applications. Silicon 12:2251–2257

  7. Mim NG, Kutub SB, Haque A (2016) Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices. Results Phys 6:233–234

    Article  Google Scholar 

  8. Bhattacharya M, Jogi J, Gupta RS, Gupta M (2017) Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT. Superlattices Microstruct 109:13–22

    Article  CAS  Google Scholar 

  9. Pardeshi H (2015) Analog/RF performance of AlInN/GaN underlap DG MOS-HEMT. Superlattice Microst 88:508–517

  10. Chang EY, Kuo CI, Hsu HT, Chiang CY, Miyamoto Y (2013) InAs thin-channel high-electron-mobility transistors with very high current-gain cut-off frequency for emerging submillimeter-wave applications. Appl Phys Express 6:4–7

    Google Scholar 

  11. Ruiz DC, Saranovac T, Han D, Ostinelli O, Bolognesi CR (2019) Impact ionization control in 50 nm low-noise high-speed InP HEMTs with InAs channel insets. 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, pp 9.3.1-9.3.4. https://doi.org/10.1109/IEDM19573.2019.8993654

  12. Kim D, Alamo JA (2008) Lateral and Vertical Scaling of In0.7Ga0.3As HEMTs for Post-Si-CMOS Logic Applications. IEEE Trans Electron Devices 55:2546–2553

    Article  CAS  Google Scholar 

  13. Ajayan J, Nirmal D (2016) 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. Superlattices Microstruct 100:526–534

    Article  CAS  Google Scholar 

  14. Rodwell MJ et al (2015) Record-Performance In(Ga)As MOSFETS Targeting ITRS High-Performance and Low-Power Logic. ECS Trans 66(4):135

    Article  CAS  Google Scholar 

  15. Zhang C, Li X (2016) III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook. IEEE Trans Electron Devices 63(1):223–234

    Article  CAS  Google Scholar 

  16. Dewey G et al. (2012) III-V field effect transistors for future ultra-low power applications, 2012 IEEE symposium on VLSI technology (VLSIT)

  17. Rodwell MJW, Lee S, Huang C, Elias D, Chobpattanna V, Rode J, Stemmer S (2014) Nanometer InP electron devices for VLSI and THz applications. In 72nd Device Research Conference 215–216

  18. Doornbos G, Passlack M (2010) Benchmarking of III–V n-MOSFET maturity and feasibility for future CMOS. IEEE Electron Device Lett 31(10):1110–1112

    Article  CAS  Google Scholar 

  19. Bonani F, Guerrieri SD, Ghione G, Pirola M (2001) A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation. IEEE Trans Electron Devices 48(5):966–977

    Article  Google Scholar 

  20. Subramani NK, Couvidat J, Hajjar AA, Nallatamby J, Quéré R (2018) Low-frequency drain noise characterization and TCAD physical simulations of GaN HEMTs: identification and analysis of physical location of traps. IEEE Electron Device Lett 39(1):107–110

  21. Im K-S, Choi J, Hwang Y, An SJ, Roh J-S, Kang S-H, Lee J-H, Lee J-H (2019) 1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer. Microelectronic Eng 215:110985

    Article  CAS  Google Scholar 

  22. Zhong Y, Sun S, Wong W, Wang HL, Liu XM, Duan ZY, Ding P, Jin Z (2017) Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs. Frontiers Inf Technol Electronic Eng 18:1180–1185

    Article  Google Scholar 

  23. Juillard A, Billard J, Chaize D, Filippini J-B, Misiak D, Vagneron L et al (2020) Low-noise HEMTs for coherent elastic neutrino scattering and low-mass dark matter cryogenic semiconductor detectors. J Low Temp Phys 199(3):798–806

  24. Saravana Kumar R, Mohanbabu A, Mohankumar N, Godwin Raj D (2018) Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications. Int J Electronics 105(3):446–456

    CAS  Google Scholar 

  25. Takahashi T, Kawano Y, Makiyama K, Shiba S, Sato M, Nakasha Y, Hara N (2017) Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors. Appl Phys Express 10:0–4

    Google Scholar 

  26. TCAD User Manual, ver.G-2016, Synopsys, USA

  27. Garber GZ (2018) Method for simulating efficient RF operation of HEMTs. J Comput Electron 17:419–426

    Article  CAS  Google Scholar 

  28. Bai Z, Du J, Jiang Z et al (2017) Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application. J Comput Electron 16:748–755

    Article  CAS  Google Scholar 

  29. Verma S, Loan SA, Alharbi AG (2018) Polarization engineered enhancement mode GaN HEMT: design and investigation. Superlattice Microst 119:181–193

    Article  CAS  Google Scholar 

  30. Swain SK, Adak S, Pati SK, Sarkar CK (2016) Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs. Superlattices Microstruct 97:258–267

    Article  CAS  Google Scholar 

  31. Mohankumar N, Syamal B, Sarkar CK (2010) Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs. IEEE Trans Electron Devices 57(4):820–826

    Article  CAS  Google Scholar 

  32. Ajayan J, Subash TD, Kurian D (2017) 20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications. Superlattice Microst 109:183–193

  33. Yao JN, Lin YC, Lin MS, Huang TJ, Hsu HT, Sze SM, Chang EY (2019) Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications. Solid-State Electronics 157:55–60

    Article  CAS  Google Scholar 

  34. Hsu SSH et al (2002) Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs. Proceedings. IEEE Lester Eastman Conference on High Performance Devices, Newark, pp 453–460

    Google Scholar 

  35. Wirth GI, da Silva JeongwookKoh R, Thewes R, Brederlow R (July 2005) Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs. in IEEE Trans Electron Devices 52(7):1576–1588

    Article  Google Scholar 

  36. Liu Y, Zhuang Y (2014) A gate current 1/f noise model for GaN/AlGaN HEMTs. J Semicond 35(12):124005

  37. Nsele SD, Tartarin JG, Escotte L, Piotrowicz S, Delage S (2015) InAlN/GaN HEMT technology for robust HF receivers: an overview of the HF and LF noise performances. 2015 International Conference on Noise and Fluctuations (ICNF), Xian, pp 1–4

  38. S.K. Saha, Compact Models for Integrated Circuit Design: Conventional Transistors and beyond, CRC Press, Taylor &Francis, Boca Raton, August 2015, pp. 41e42 ch. 2, sec. 2.2.6.2

  39. Jamal Deen M (2004) Editorial: noise in devices and circuits. IEE Proc - Circuits, Devices Systems 151(2):93–94

    Article  Google Scholar 

  40. Rengel R, Mateos J, Pardo D, González T, Martín MJ (2001) Monte Carlo analysis of dynamic and noise performance of submicron MOSFETs at RF and microwave frequencies. Semicond Sci Technol 16:939–946

    Article  CAS  Google Scholar 

  41. Van Der Ziel A, Chenette ER (1978) In: Marton L (ed) Noise in Solid State Devices, vol 46. Academic Press, pp 313–383

  42. Balandin A, Morozov SV, Cai S, Li R, Wang KL, Wijeratne G, Viswanathan CR (Aug. 1999) Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications. IEEE Trans Microwave Theory Tech 47(8):1413–1417

    Article  Google Scholar 

  43. Lee S, Webb KJ, Tilak V, Eastman LF (2003) Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs. IEEE Trans Microwave Theory Tech 51(5):1567–1577

    Article  CAS  Google Scholar 

  44. Lee J, Kuliev A, Kumar V, Schwindt R, Adesida I (June 2004) Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers. IEEE Microwave Wireless Components Lett 14(6):259–261

    Article  Google Scholar 

  45. Nsele SD, Escotte L, Tartarin J, Piotrowicz S (2013) Noise characteristics of AlInN/GaN HEMTs at microwave frequencies. 2013 22nd International Conference on Noise and Fluctuations (ICNF), Montpellier, pp 1–4

  46. Mohanbabu A, Saravana Kumar R, Mohankumar N (2017) Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices. Superlattices Microstructure 112:604–618

    Article  CAS  Google Scholar 

  47. Poornachandran R, Mohankumar N, Saravana Kumar R, Sujatha G (2019) Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT. J Computation Electron 18:1280–1290

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. ECE, V.S.B Engineering College, KARUR, Tamil Nadu, India

    G. Sujatha

  2. EECE, GITAM University, Bengaluru Campus, Bengaluru, Karnataka, India

    N. Mohankumar, Girish Shankar Mishra, V. Mahesh & M. Arunkumar

  3. Anna University, Chennai, Tamil Nadu, India

    R. Poornachandran

  4. ECE, Bannari Amman Institute of Technology, Anna University, Chennai, Tamil Nadu, India

    R. Saravana Kumar

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  1. G. Sujatha
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All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data; have been involved in drafting the manuscript or revising it critically for important intellectual content; and have given final approval of the version to be published. Each author has participated sufficiently in the work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.

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Sujatha, G., Mohankumar, N., Poornachandran, R. et al. Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics. Silicon 14, 1925–1933 (2022). https://doi.org/10.1007/s12633-021-00954-3

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