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Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials

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Micro-Electronics and Telecommunication Engineering

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 179))

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Abstract

This work reports that the composite channel InGaAs, InAs and InGaAs thin, with dual delta-doped double recessed gate (DG) MOSHEMT, is 40 nm gate length, the barrier 3 nm and 15 nm thick channel, and this structure has been simulated in the TCAD Sentaurus simulation tool. The DC and RF characteristics of proposed device are characterized by different gate lengths along with different VDS. The novel design features included under this proposed structure, namely recessed high stem gate, thin barrier, dual gate, composite channel and the HfO2 as a dielectric material, are applicable for low leakage current along with Tera Hertz frequency applications. The simulation results show the exhibition of a high drain current of 1.38 × 10−3 A/µm, transconductance of 3.35 × 10−3 S/µm, threshold voltage of 0.13 V, cutoff and maximum frequency of oscillation of 791 and 995 GHz by the DGMOSHEMT devices at LG = 40 nm and VDS = 0.5 V. The findings are obtained  due to the superior electron transportation properties of a DG MOSHEMT structure with compound semiconductor III-V materials.

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Author information

Authors and Affiliations

  1. ECE Department, Bannari Amman Institute of Technology, Sathyamangalam, Tamil Nadu, India

    R. Saravana Kumar

  2. EECE Department, Gitam School of Technology, Bengaluru, India

    N. Mohankumar

  3. ECE Department, SKP Engineering College, Tiruvannamalai, Tamil Nadu, India

    S. Baskaran & R. Poornachandran

Authors
  1. R. Saravana Kumar
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  2. N. Mohankumar
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  3. S. Baskaran
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  4. R. Poornachandran
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Corresponding author

Correspondence to R. Saravana Kumar .

Editor information

Editors and Affiliations

  1. Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Ghaziabad, India

    Devendra Kumar Sharma

  2. Institute of Information Technology, Vietnam National University, Cay Giay, Vietnam

    Le Hoang Son

  3. Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Ghaziabad, India

    Rohit Sharma

  4. Department of Electrical and Electronics Engineering, Trakya University, Edirne, Turkey

    Korhan Cengiz

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Saravana Kumar, R., Mohankumar, N., Baskaran, S., Poornachandran, R. (2021). Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials. In: Sharma, D.K., Son, L.H., Sharma, R., Cengiz, K. (eds) Micro-Electronics and Telecommunication Engineering. Lecture Notes in Networks and Systems, vol 179. Springer, Singapore. https://doi.org/10.1007/978-981-33-4687-1_49

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  • DOI: https://doi.org/10.1007/978-981-33-4687-1_49

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  • Print ISBN: 978-981-33-4686-4

  • Online ISBN: 978-981-33-4687-1

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