Abstract
In this paper, for the first time, the performance evaluation of negative capacitance single-active layer double-gate (NC-SALDG) TFT is presented. In the proposed NC-SALDG TFT, amorphous InGaZnO material is used as an active layer owing to its enhanced carrier mobility and improved optical transmittance properties. By coupling the TCAD numerical simulation with 1D Landau-Khalatnikov (LK) equation, a semi-analytical model of NC-SALDG TFT is developed. The subthreshold characteristics of NC-SALDG TFT are analyzed by varying the thickness of aluminum (Al) doped HfO2 and different ferroelectric materials. Further, high ON current, low OFF current, and better minimum & average subthreshold swing of NC-SALDG TFT are observed for Al-doped HfO2 material compared to its counterparts. From the result analysis, the proposed NC-SALDG TFT shows superior subthreshold performance over conventional SALDG TFT. The baseline SALDG TFT was simulated with 2D TCAD simulator Atlas™ from Silvaco.
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Data Availability
The data that support the findings of this study are available from the corresponding author, upon reasonable request.
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Acknowledgements
The authors gratefully acknowledge the simulation facilities provided by Microelectronics & VLSI Laboratory, NIT Calicut.
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The authors declare that Sandeep Moparthi has received research support from National Institute of Technology Calicut. Further, authors have no other relevant funding or financial support to disclose in relevance to the work shown in this paper.
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All the authors contributed to study conception and conceptualization. Material preparation, TCAD simulation and analysis were performed by Sandeep Moparthi. Formal analysis and investigation of the simulated results were done by Ramesh Lavudi. The first draft of the manuscript was written by Sandeep Moparthi and edited by Subba Rao Suddapalli and Gopi Krishna Saramekala. Moreover, all the authors commented on previous versions of the manuscript and the revised manuscript was read and approved by all the authors. Finally, the complete work was carried under the supervision of Gopi Krishna Saramekala.
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Moparthi, S., Lavudi, R., Suddapalli, S.R. et al. Investigation of Subthreshold Characteristics of Negative Capacitance Single-Active Layer Double-Gate (NC-SALDG) Thin-Film Transistor (TFT). Silicon 14, 1309–1314 (2022). https://doi.org/10.1007/s12633-020-00932-1
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DOI: https://doi.org/10.1007/s12633-020-00932-1