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A Kinetic Model of Silicon Nanocrystal Formation

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Abstract

Silicon nanocrystals (SiNC) in silicon oxide is a promising material for many applications in micro- and nanoelectronics. This article develops a theory of the kinetics of SiNC formation with the both diffusion and reaction mechanisms of their formation being taken into account. The theoretical expressions obtained for the nanocrystals concentration change and silicon implanted in oxide and their sizes are consistent with experimental results and can be used to optimize the technological processes conditions of SiNC formation.

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Acknowledgements

The work was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 0004-2019-0001.

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Authors and Affiliations

  1. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Moscow, Russia

    Sergey V. Bulyarskiy

  2. Scientific-Manufacturing Complex “Technological Centre”, Zelenograd, Moscow, Russia

    Vyacheslav V. Svetukhin

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  1. Sergey V. Bulyarskiy
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  2. Vyacheslav V. Svetukhin
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Correspondence to Sergey V. Bulyarskiy.

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Bulyarskiy, S.V., Svetukhin, V.V. A Kinetic Model of Silicon Nanocrystal Formation. Silicon 13, 3321–3327 (2021). https://doi.org/10.1007/s12633-020-00703-y

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