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Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-K Dielectrics and Gate Metals

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Abstract

The paper presents the investigation of linearity distortion analysis of double gate junctionless transistor with high-k gate dielectrics and gate metals. As double gate junctionless transistors have shown high performance in digital circuits, linearity analysis is carried out to understand nonlinear behavior of the device for RFIC applications. In order to ensure minimum intermodulation and higher order harmonics at the system output, different linearity parameters like Second Order Voltage Intercept Point, Third Order distortion, Third Order Input Intercept Point and Third Order Intermodulation Distortion are evaluated. The results show that junctionless transistor should be biased at appropriate low voltage to ensure better linearity which is desired for RFICs. The effects of high-k gate dielectrics and gate metals on linearity characteristics of junctionless transistor are also investigated. Deterioration of the linearity is observed in junctionless transistor for the use of high-k insulators as gate dielectrics. It is also observed that low work function gate material is suitable to achieve higher linearity in low power applications.

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Acknowledgments

The authors acknowledge TEQIP-III for facilitating Synopsys TCAD Tool in VLSI Lab, Department of Electronics and Communication Engineering of National Institute of Technology Silchar, India to carry out the research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Mizoram University, Aizawl, 796004, India

    Achinta Baidya

  2. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India

    T. R. Lenka & S. Baishya

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  1. Achinta Baidya
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  2. T. R. Lenka
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  3. S. Baishya
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Correspondence to Achinta Baidya.

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Baidya, A., Lenka, T.R. & Baishya, S. Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-K Dielectrics and Gate Metals. Silicon 13, 3113–3120 (2021). https://doi.org/10.1007/s12633-020-00669-x

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