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Investigation of Gate Material Engineering in Junctionless Transistor for Digital and Analog Applications

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Abstract

In this paper, we propose dual material gate with dual-k dielectric gate oxide double gate junctionless transistor ‘DMG-DK-JLT’ for significant enhancement of performance. We showed, using 2D simulation that the proposed DMG-DK-JLT exhibit: 1) suppressed gate induced drain leakage due to band to band tunneling in OFF state (VDS = 1 V, VGS = 0 V) by 5 orders. 2) Impressively high ION/IOFF ratio of ~108. 3) For VGS=VDS = 1 V, DMG-DK-JLT performs better over conventional double gate JLT on various digital and analog performance metrics such as transconductance (Gm, 64% improvement), early voltage (VEA, 107% improvement), intrinsic gain (GmRO, 294% improvement), unity gain cutoff frequency (fT, 48% improvement), output resistance (Ro, 139% improvement), and transconductance-to-drain current ratio (Gm/ID, 218% improvement at VGS = 0.2 V, VDS = 1 V). We also compared its performance on above metrics with other gate material engineered Junctionless transistors. Moreover, we also show these values are further improved several orders by adding high-k gate sidewall spacer to our proposed DMG-DK-JLT.

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Acknowledgments

We are thankful to the reviewers for the valuable suggestion.

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The authors did not receive support from any organization for the submitted work.

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Authors and Affiliations

  1. Aligarh Muslim University, Aligarh, Maharashtra, India

    MD Yasir Bashir, Mohd. Adil Raushan & Mohammed Jawaid Siddiqui

  2. Maulana Mukhtar Ahmad Nadvi Technical Campus, Malegaon, Maharashtra, India

    Shameem Ahmad

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  1. MD Yasir Bashir
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  2. Mohd. Adil Raushan
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  3. Shameem Ahmad
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  4. Mohammed Jawaid Siddiqui
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All the authors are equally contributed in the manuscript.

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Correspondence to MD Yasir Bashir.

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Bashir, M.Y., Raushan, M.A., Ahmad, S. et al. Investigation of Gate Material Engineering in Junctionless Transistor for Digital and Analog Applications. Silicon 14, 2851–2862 (2022). https://doi.org/10.1007/s12633-021-01066-8

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