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Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs

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Abstract

In this paper, 2-D analytical models of channel central potential, threshold voltage, subthreshold current and subthreshold swing for graded channel double gate (GC-DG) Junctionless FETs (JLFETs) have been presented. The 2-D Poisson’s equation has been solved to determine the channel central potential by parabolic approximation method with appropriate boundary conditions. The minimum potential for the channel is obtained from the channel potential expression in order to formulate threshold voltage, subthreshold current and subthreshold swing. The validity of the model results has been verified using TCAD numerical data obtained from 2-D ATLAS device simulator from Silvaco.

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Authors and Affiliations

  1. Department of Electronics and Instrumentation Engineering, M.J.P. Rohilkhand University, Bareilly, 243006, India

    Yograj Singh Duksh

  2. Department of Electronics and Communication Engineering, G B Pant Institute of Engineering and Technology, Pauri Garhwal, Uttarakhand, 246194, India

    Balraj Singh

  3. Department of Electrical Engineering, IIT, Bihta, Patna, 801103, India

    Deepti Gola & Pramod Kumar Tiwari

  4. Department of Electronics Engineering, IIT (BHU), Varanasi, 221005, India

    Satyabrata Jit

Authors
  1. Yograj Singh Duksh
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  2. Balraj Singh
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  3. Deepti Gola
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  4. Pramod Kumar Tiwari
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  5. Satyabrata Jit
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Correspondence to Balraj Singh.

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Duksh, Y.S., Singh, B., Gola, D. et al. Subthreshold Modeling of Graded Channel Double Gate Junctionless FETs. Silicon 13, 1231–1238 (2021). https://doi.org/10.1007/s12633-020-00514-1

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  • DOI: https://doi.org/10.1007/s12633-020-00514-1

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