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Temperature-Dependent Analytical Modeling of Graded-Channel Gate-All-Around (GC-GAA) Junctionless Field-Effect Transistors (JLFETs)

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Abstract

In this paper, analytical modeling of center channel potential has been performed for graded-channel gate-all-around (GC-GAA) junctionless field-effect transistor (JLFET). The three-dimensional (3D) Poisson’s equation has been solved to discover the center channel potential utilizing the parabolic approximation equation with excellent boundary conditions. The minimum center channel potential has been adopted to calculate the subthreshold current by the drift-diffusion method. The effect of high temperature and doping concentration on the center potential and subthreshold current has been investigated, and the results have been verified. The validity of the model has been verified using the ATLAS TCAD device simulator. The results reveal that the GC-GAA JLFET reduces the OFF-state leakage current with a high-graded abrupt junction inside the channel region. Hence, this finds many applications in low-power, high-speed, and high-density circuits.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Dr. A.P.J. Abdul Kalam Technical University, Lucknow, Uttar Pradesh, 226031, India

    Vidyadhar Gupta, Nitish Kumar & Himanshi Awasthi

  2. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Prayagraj, Uttar Pradesh, 211004, India

    Sanjeev Rai

  3. Department of Applied Science and Humanities, Rajkiya Engineering College, Ambedkar Nagar, Ambedkar Nagar, Uttar Pradesh, 224122, India

    Amit Kumar Pandey

  4. Department of Electronics Engineering, Rajkiya Engineering College, Sonbhadra, Uttar Pradesh, 231206, India

    Abhinav Gupta

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  1. Vidyadhar Gupta
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  2. Nitish Kumar
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  4. Sanjeev Rai
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  5. Amit Kumar Pandey
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All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data; have been involved in drafting the manuscript or revising it critically for important intellectual content; and have given final approval of the version to be published. Each author has participated sufficiently in the work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.

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Correspondence to Abhinav Gupta.

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Gupta, V., Kumar, N., Awasthi, H. et al. Temperature-Dependent Analytical Modeling of Graded-Channel Gate-All-Around (GC-GAA) Junctionless Field-Effect Transistors (JLFETs). J. Electron. Mater. 50, 3686–3691 (2021). https://doi.org/10.1007/s11664-021-08913-9

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