Abstract
Surface passivation plays critical role in enhancing Silicon Solar cell performance. Selection of proper passivation layers on n and p type c-Si is a major challenge. Induced charge of dielectric layers is considered as an important parameter while chhoosing proper passivation layer on n and p type silicon. In this article, we report suitable choice of different dielectric layers on n-type c-Si Solar cell on the basis of induced charge machanism and its impact on density of state of n-type c-Si Solar cell. Effect of induced charges of different dielectric layers is elucidated through theoretical approach. Lastly, we show the calculation of the Dit and minority carrier lifetime (τ). We found that Dit of Al2O3 and SiO2 is about 1011 cm 2 eV−1 range while TiO2, HfO2 is 1013 cm 2 eV−1 range and SiNx is 1012 cm 2 eV−1 range. We have validated the theoretical results by experiments.
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Acknowledgements
The authors are grateful to the SERI DST, Govt. of India for financial support associated to the solar cell related research. The authors deeply acknowledge Meghnad Saha Institute of Technology, TIG for providing the infrastructural support to execute the research. The authors thank CEGESS,IIEST for infrastructural support. Eventually the authors are deeply grateful to Mr. Arindam Ray(Research fellow of JNCASR) for contributing in manuscript modification.
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Ray, S., Pal, B., Ghosh, H. et al. Effect of Induced Charges on the Performance of Different Dielecteric Layers of c-Si Solar Cell by Experimental and Theoretical Approach. Silicon 12, 2601–2609 (2020). https://doi.org/10.1007/s12633-019-00353-9
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DOI: https://doi.org/10.1007/s12633-019-00353-9