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Career Selective Si Solar Cells: Modelling and Performance Metrics Evaluation

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Abstract

Silicon (Si) junctionless solar Photo Voltaic Cells (PVCs) with semiconducting carrier selective blocking layer can modify output efficiency of solar cell. In this research work, we have proposed use of both electron–hole selective layer in Si solar cell with SILVACO simulation. This paper simulates and evaluates two possible electron-selective oxides (TiO2 and ZnO) and two possible hole-selective oxides (CuAlO2 and NiO). The results in terms of solar performance metric is compared and further TiO2 and NiO as carrier selective layers are proposed. The simulation results suggest the fermi level pinning on the device as a reason for increase in output efficiency. This research work comprehends a considerable understanding to band-engineer selective contact semiconducting oxide Si junctionless solar cell device. The performance parameters with Jsc = 10.08 mA/cm2, Voc = 2.69 V, fill factor (FF) = 99.8% and conversion efficiency of 27.09% (1 sun) are obtained under AM1.5G illumination.

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Authors and Affiliations

  1. Department of Electronics Engineering, Deenbandhu University of Science and Technology, Faridabad, India

    Rashmi Chawla

  2. Department of Electronics Engineering, Deenbandhu University of Science and Technology, Murthal, India

    Poonam Singhal & Amit Kumar Garg

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  1. Rashmi Chawla
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  2. Poonam Singhal
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  3. Amit Kumar Garg
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Correspondence to Rashmi Chawla.

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Chawla, R., Singhal, P. & Garg, A.K. Career Selective Si Solar Cells: Modelling and Performance Metrics Evaluation. Trans. Electr. Electron. Mater. 22, 659–665 (2021). https://doi.org/10.1007/s42341-020-00281-1

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