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Enhancement of Performance in TFET by Reducing High-K Dielectric Length and Drain Electrode Thickness

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Abstract

A Dual Material Double Gate Tunnel Field Effect Transistor (DMDGTFET) with reduced high-K dielectric length (LK = 15 nm) and drain electrode thickness (6 nm) is proposed and performed a TCAD simulation. The simulation result of proposed device exhibits suppression in gate-to-drain capacitance (CGD). The (CGD) is proportional to dielectric constant (ε) of the gate insulator and drain-electrode thickness of device. In the proposed DMDGTFET, the reduction in drain electrode thickness and LK gives a low electron concentration (Q) and low dielectric constant (ε) in channel/drain junction, respectively, which results in suppression of CGD. At VGS = 2 V, the CGD for the proposed and conventional device are 9 f F, and 7 f F, respectively. In addition, the proposed device exhibit unity current-gain cut-off frequency of 62 GHz, while it is 57 GHz for conventional device. The on-current (ION) of the proposed device is also measured as 2 × 10−5 (A/mm). Thus, the proposed DMDGTFET is potential candidate for fast switching applications without compromising on-current (ION).

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Authors and Affiliations

  1. Department of ECE, St. Xavier′s Catholic College of Engineering, Chunkankadai, Tamil Nadu, India

    C. Sheeja Herobin Rani

  2. Department of Electronics Engineering, Madras Institute of Technology, Chennai, Tamil Nadu, India

    K. Bhoopathy Bagan

  3. Department of ECE, Karunya Institute of Technology and Sciences, Coimbatore, India

    D. Nirmal

  4. ASIC Engineer, Test and Verification Solutions India Pvt. Limited, Chennai, India

    R. Solomon Roach

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  1. C. Sheeja Herobin Rani
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  2. K. Bhoopathy Bagan
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  3. D. Nirmal
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  4. R. Solomon Roach
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Correspondence to C. Sheeja Herobin Rani.

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Rani, C.S.H., Bagan, K.B., Nirmal, D. et al. Enhancement of Performance in TFET by Reducing High-K Dielectric Length and Drain Electrode Thickness. Silicon 12, 2337–2343 (2020). https://doi.org/10.1007/s12633-019-00328-w

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  • DOI: https://doi.org/10.1007/s12633-019-00328-w

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