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Induction of Buried Oxide Layer in Substrate FD-SOI MOSFET for Improving the Digital and Analog Performance

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Abstract

This paper is about to compare the electrical performance of conventional FD-SOI MOSFET with the BOX integrated substrate SOI MOSFET. The performance is compared and contrasted with the help of electric field, energy band diagram, surface potential, gate material (variation of workfunction) and parasitic capacitances. On comparison the proposed structure shows high Ion/Ioff ratio, high RSP, lower sub-threshold slope and lower threshold voltage then the conventional FD-SOI MOSFET. The performance of the proposed structure is also studied by the variation of buried oxide (BOX) thickness and the overlapped SOI (LSOI) region. Interestingly, by decreasing the thickness of BOX and LSOI region, the leakage current is decreasing without affecting the on-state current and the threshold voltage, thus increasing the Ion/Ioff ratio and decreasing the sub-threshold slope. In addition, this work also shows the improved analog performance in terms of transconductance (gm), gate to drain capacitance (Cgd), gate to source capacitances (Cgs), and cut-off frequency as compared to conventional FD-SOI MOSFET. The comparative study shows that the proposed structure is compatible for the digital as well as analog application without affecting the current fabrication process flow of the conventional FD-SOI MOSFET. Sentaurus two-dimensional simulations are used to analyze the performance of the proposed structure.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida, UP, 201301, India

    Vimal Kumar Mishra, Bajrang Bansal & Ashish Gupta

  2. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Kota, Rajasthan, 302017, India

    Anand Agrawal

Authors
  1. Vimal Kumar Mishra
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  2. Bajrang Bansal
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  3. Ashish Gupta
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  4. Anand Agrawal
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Correspondence to Vimal Kumar Mishra.

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Mishra, V.K., Bansal, B., Gupta, A. et al. Induction of Buried Oxide Layer in Substrate FD-SOI MOSFET for Improving the Digital and Analog Performance. Silicon 12, 2241–2249 (2020). https://doi.org/10.1007/s12633-019-00317-z

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  • DOI: https://doi.org/10.1007/s12633-019-00317-z

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